Mechanical Data
Features
Maximum Ratings
Electrical Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
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•
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•
•
•
•
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Notes:
DS30055 Rev. 8 - 2
Epitaxial Planar Die Construction
Complementary NPN Types Available
(MMBTA13 /MMBTA14)
Ideal for Low Power Amplification and Switching
High Current Gain
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe). Terminal Connections: See Diagram
MMBTA63 Marking K2E, K3E See Page 3
MMBTA64 Marking K3E See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
2. Short duration pulse test used to minimize self-heating effect
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
MMBTA64
MMBTA63
MMBTA64
MMBTA63
(Note 1)
(Note 1)
(Note 1)
www.diodes.com
E
V
V
Symbol
V
B
(BR)CEO
CE(SAT)
BE(SAT)
I
I
h
1 of 3
CBO
EBO
f
FE
TOP VIEW
B
T
T
Symbol
J
V
V
V
R
G
H
C
, T
P
CBO
CEO
EBO
I
PNP SURFACE MOUNT DARLINGTON TRANSISTOR
θ JA
C
D
D
C
STG
D
A
10,000
10,000
20,000
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5,000
E
MMBTA63 / MMBTA64
Min
125
-30
⎯
⎯
⎯
⎯
E
J
B C
K
2
O
Max
-100
-100
-1.5
-2.0
3
L
⎯
⎯
⎯
Fire Retardants.
-55 to +150
MHz
Unit
nA
nA
⎯
Value
V
V
V
-500
300
417
-30
-30
-10
M
I
V
V
I
I
I
I
I
I
V
f = 100MHz
C
C
C
C
C
C
C
CB
EB
CE
= -100μA V
= -10mA, V
= -10mA, V
= -100mA, V
= -100mA, V
= -100mA, I
= -100mA, V
= -10V, I
= -30V, I
= -5.0V, I
All Dimensions in mm
Dim
A
B
C
D
G
H
K
M
Test Condition
E
J
L
α
MMBTA63 / MMBTA64
C
E
C
BE
B
= 0
= 0
CE
CE
CE
CE
CE
= -10mA,
SOT-23
= -100μA
= 0V
0.013
0.903
0.085
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.45
Min
= -5.0V
= -5.0V
= -5.0V
= -5.0V
= -5.0V
0°
© Diodes Incorporated
°C/W
Unit
mW
mA
°C
V
V
V
0.180
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
8°