Mechanical Data
Electrical Characteristics
Features
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
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•
•
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•
•
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•
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Notes:
DS30047 Rev. 11 - 2
Epitaxial Planar Die Construction
Complementary PNP Types Available (MMBTA63
/MMBTA64)
Ideal for Medium Power Amplification and Switching
High Current Gain
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
MMBTA13 Marking (See Page 3): K2D, K3D
MMBTA14 Marking (See Page 3): K3D
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
2: Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
MMBTA13
MMBTA14
MMBTA13
MMBTA14
www.diodes.com
V
Symbol
V
V
E
(BR)CEO
CE(SAT)
BE(SAT)
I
I
C
C
B
h
CBO
EBO
f
obo
FE
ibo
T
TOP VIEW
1 of 3
C
G
H
B
T
Symbol
J
V
V
V
R
D
, T
P
CBO
CEO
EBO
I
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
θ JA
A
C
D
10,000
10,000
20,000
E
STG
5,000
C
Min
125
30
⎯
⎯
⎯
⎯
8.0 Typical
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J
15 Typical
MMBTA13 / MMBTA14
B C
K
E
L
Max
100
100
1.5
2.0
2
⎯
⎯
⎯
O
3
Fire Retardants.
MHz
Unit
M
-55 to +150
nA
nA
pF
pF
⎯
V
V
V
Value
300
300
417
30
30
10
I
V
V
I
I
I
I
I
I
V
V
V
C
C
C
C
C
C
C
CB
EB
CB
EB
CE
= 100μA V
= 10mA, V
= 10mA, V
= 100mA, V
= 100mA, V
= 100mA, I
= 100mA, V
= 10V, I
= 30V, I
= 10V, f = 1.0MHz, I
= 0.5V, f = 1.0MHz, I
= 5.0V, I
Dim
All Dimensions in mm
M
A
B
C
D
E
G
H
K
J
L
α
Test Condition
C
E
BE
C
B
= 0
= 0
CE
CE
CE
CE
CE
MMBTA13 / MMBTA14
= 10mA, f = 100MHz
= 100μA
= 0V
SOT-23
= 5.0V
= 5.0V
= 5.0V
= 5.0V
= 5.0V
0.013
0.903
0.085
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.45
Min
0°
© Diodes Incorporated
E
C
°CW
Unit
mW
mA
= 0
°C
V
V
V
= 0
0.180
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
8°