MMBT5551-7-F Diodes Inc, MMBT5551-7-F Datasheet - Page 2

• Manufacturer Part Number: MMBT5551-7-F
• Description: TRANS NPN 160V 350MW SMD SOT23-3
• Manufacturer: Diodes Inc

Specifications of MMBT5551-7-F

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 160V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 10mA, 5V
• Power - Max: 300mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 160 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 80
• Minimum Operating Temperature: - 55 C
• Collector Emitter Voltage V(br)ceo: 160V
• Power Dissipation Pd: 300mW
• Dc Collector Current: 600mA
• Dc Current Gain Hfe: 80
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT5551-FDITR

Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Notes:
MMBT5551
Document number: DS30061 Rev. 11 - 2
350
300
250
200
150
400
100
50
4. Short duration pulse test used to minimize self-heating effect.
0
0
Fig. 1 Power Dissipation vs. Ambient Temperature
25
T , AMBIENT TEMPERATURE (°C)
A
Characteristic
50
75
100 125
@T
A
= 25°C unless otherwise specified
150
175
200
www.diodes.com
V
V
V
V
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
I
I
h
CBO
EBO
h
nF
f
FE
obo
T
2 of 4
fe
Min
180
160
100
6.0
1,000
⎯
⎯
80
80
30
⎯
⎯
⎯
50
⎯
100
10
1
Fig. 2 Typical DC Current Gain vs. Collector Current
1
V
CE
Max
0.15
0.20
250
250
300
1.0
6.0
8.0
50
50
⎯
⎯
⎯
⎯
⎯
= 5V
T = 25°C
I , COLLECTOR CURRENT (mA)
C
A
MHz
Unit
nA
μA
nA
pF
dB
⎯
⎯
V
V
V
V
V
T = 150°C
A
I
I
I
V
V
V
I
I
I
I
I
I
I
V
V
f = 1.0kHz
V
f = 100MHz
V
R
10
C
C
E
C
C
C
C
C
C
C
CB
CB
EB
CB
CE
CE
CE
S
= 10mA, I
= 10mA, I
= 100μA, I
= 1.0mA, I
= 10μA, I
= 1.0mA, V
= 10mA, V
= 50mA, V
= 50mA, I
= 50mA, I
T = -50°C
= 1.0kΩ, f = 1.0kHz
A
= 4.0V, I
= 10V, I
= 5.0V, I
= 120V, I
= 120V, I
= 10V, f = 1.0MHz, I
= 10V, I
Test Condition
C
B
B
B
B
C
C
B
C
C
E
= 0
E
E
CE
CE
CE
= 1.0mA
= 1.0mA
= 5.0mA
= 5.0mA
= 1.0mA,
= 10mA,
= 0
= 0
= 0
= 200μA,
MMBT5551
= 0
= 0, T
= 5.0V
= 5.0V
= 5.0V
© Diodes Incorporated
A
August 2008
= 100°C
E
100
= 0