MMBT5551-7-F Diodes Inc, MMBT5551-7-F Datasheet - Page 2
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MMBT5551-7-F
Manufacturer Part Number
MMBT5551-7-F
Description
TRANS NPN 160V 350MW SMD SOT23-3
Manufacturer
Diodes Inc
Datasheet
1.MMBT5551-7-F.pdf
(4 pages)
Specifications of MMBT5551-7-F
Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
160V
Vce Saturation (max) @ Ib, Ic
200mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
300mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
160 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
300 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
80
Minimum Operating Temperature
- 55 C
Collector Emitter Voltage V(br)ceo
160V
Power Dissipation Pd
300mW
Dc Collector Current
600mA
Dc Current Gain Hfe
80
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT5551-FDITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT5551-7-F
Manufacturer:
DIODES
Quantity:
36 000
Part Number:
MMBT5551-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
Notes:
MMBT5551
Document number: DS30061 Rev. 11 - 2
350
300
250
200
150
400
100
50
4. Short duration pulse test used to minimize self-heating effect.
0
0
Fig. 1 Power Dissipation vs. Ambient Temperature
25
T , AMBIENT TEMPERATURE (°C)
A
Characteristic
50
75
100 125
@T
A
= 25°C unless otherwise specified
150
175
200
www.diodes.com
V
V
V
V
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
I
I
h
CBO
EBO
h
nF
f
FE
obo
T
2 of 4
fe
Min
180
160
100
6.0
1,000
⎯
⎯
80
80
30
⎯
⎯
⎯
50
⎯
100
10
1
Fig. 2 Typical DC Current Gain vs. Collector Current
1
V
CE
Max
0.15
0.20
250
250
300
1.0
6.0
8.0
50
50
⎯
⎯
⎯
⎯
⎯
= 5V
T = 25°C
I , COLLECTOR CURRENT (mA)
C
A
MHz
Unit
nA
μA
nA
pF
dB
⎯
⎯
V
V
V
V
V
T = 150°C
A
I
I
I
V
V
V
I
I
I
I
I
I
I
V
V
f = 1.0kHz
V
f = 100MHz
V
R
10
C
C
E
C
C
C
C
C
C
C
CB
CB
EB
CB
CE
CE
CE
S
= 10mA, I
= 10mA, I
= 100μA, I
= 1.0mA, I
= 10μA, I
= 1.0mA, V
= 10mA, V
= 50mA, V
= 50mA, I
= 50mA, I
T = -50°C
= 1.0kΩ, f = 1.0kHz
A
= 4.0V, I
= 10V, I
= 5.0V, I
= 120V, I
= 120V, I
= 10V, f = 1.0MHz, I
= 10V, I
Test Condition
C
B
B
B
B
C
C
B
C
C
E
= 0
E
E
CE
CE
CE
= 1.0mA
= 1.0mA
= 5.0mA
= 5.0mA
= 1.0mA,
= 10mA,
= 0
= 0
= 0
= 200μA,
MMBT5551
= 0
= 0, T
= 5.0V
= 5.0V
= 5.0V
© Diodes Incorporated
A
August 2008
= 100°C
E
100
= 0