MMSTA13-7-F Diodes Inc, MMSTA13-7-F Datasheet - Page 2
![TRANSISTOR DARL NPN 30V SC70-3](/photos/5/24/52423/sot-323_sml.jpg)
MMSTA13-7-F
Manufacturer Part Number
MMSTA13-7-F
Description
TRANSISTOR DARL NPN 30V SC70-3
Manufacturer
Diodes Inc
Datasheet
1.MMSTA13-7-F.pdf
(3 pages)
Specifications of MMSTA13-7-F
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
300mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1.5V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
10000 @ 100mA, 5V
Power - Max
200mW
Frequency - Transition
125MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
MMSTA13-FDITR
Electrical Characteristics
OFF CHARACTERISTICS (Note 5)
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Note:
DS30165 Rev. 9 - 2
1,000,000
100,000
200
150
100
10,000
50
1,000
0
5. Short duration pulse test used to minimize self-heating effect.
100
Fig. 1, Max Power Dissipation vs. Ambient Temperature
0
1
25
Fig. 3, DC Current Gain vs. Collector Current
T , AMBIENT TEMPERATURE (°C)
A
50
I , COLLECTOR CURRENT (mA)
C
Characteristic
10
75
100 125
@T
A
100
= 25°C unless otherwise specified
150
MMSTA13
MMSTA14
MMSTA13
MMSTA14
175
1,000
200
www.diodes.com
V
Symbol
V
V
(BR)CEO
CE(SAT)
BE(SAT)
I
I
C
C
h
2 of 3
CBO
EBO
f
obo
FE
ibo
T
Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current
1.05
1.00
0.90
0.85
0.80
0.70
0.65
0.60
0.55
0.50
0.45
0.40
1.10
0.95
0.75
10,000
10,000
20,000
5,000
Min
125
30
⎯
⎯
⎯
⎯
0.8
0.6
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.7
0.5
0.4
0.3
0.2
8.0 Typical
15 Typical
1
0.1
Fig. 4, Base Emitter Voltage vs. Collector Current
V
I
I
C
B
Max
CE
100
100
1.5
2.0
⎯
⎯
⎯
= 1000
I , COLLECTOR CURRENT (mA)
= 5V
I , COLLECTOR CURRENT (mA)
C
C
T = 25°C
T = 150°C
A
10
A
MHz
Unit
nA
nA
1
pF
pF
⎯
V
V
V
T = 150°C
A
T = -50°C
T = -50°C
T = 25°C
A
A
A
I
V
V
I
I
I
I
I
I
V
V
V
f = 100MHz
C
C
C
C
C
C
C
CB
EB
CB
EB
CE
= 100μA V
= 10mA, V
= 10mA, V
= 100mA, V
= 100mA, V
= 100mA, I
= 100mA, V
= 10V, I
= 30V, I
= 10V, f = 1.0MHz, I
= 0.5V, f = 1.0MHz, I
= 5.0V, I
100
10
Test Condition
C
E
C
BE
B
= 0
= 0
MMSTA13/MMSTA14
CE
CE
CE
CE
CE
= 10mA,
= 100μA
= 0V
= 5.0V
= 5.0V
= 5.0V
= 5.0V
= 5.0V
© Diodes Incorporated
1,000
E
100
C
= 0
= 0