DSS5160V-7 Diodes Inc, DSS5160V-7 Datasheet - Page 2

• Manufacturer Part Number: DSS5160V-7
• Description: TRANS BIPOLAR PNP -60V SOT-563
• Manufacturer: Diodes Inc

Specifications of DSS5160V-7

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 330mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 500mA, 5V
• Power - Max: 600mW
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-563
• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: 60V
• Power Dissipation Pd: 600mW
• Dc Collector Current: 100mA
• Dc Current Gain Hfe: 200
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DSS5160VDITR

Electrical Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes:
DSS5160V
Document number: DS31670 Rev. 2 - 2
600
500
400
300
200
100
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
0
R
Characteristic
θJA
25
T , AMBIENT TEMPERATURE (°C)
A
= 208°C/W
Ambient Temperature (Note 3)
Fig. 1 Power Dissipation vs.
50
75
@T
A
100
= 25°C unless otherwise specified
125
V
V
V
R
Symbol
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
CE(SAT)
BE(SAT)
C
I
I
I
BE(ON)
h
CBO
CES
EBO
t
t
f
150
on
t
off
t
FE
obo
t
t
T
d
s
r
f
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Min
200
150
100
150
-80
-60
-5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
260
225
80
35
45
35
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.001
0.01
0.1
10
1
0.1
-100
-100
-100
-160
-175
-330
Max
330
-1.1
-0.9
-50
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
vs. Collector-Emitter Voltage (Note 3)
MHz
Unit
Fig. 2 Typical Collector Current
mV
mΩ
nA
μA
nA
nA
pF
ns
ns
ns
ns
ns
ns
⎯
V
V
V
V
V
Pw = 100ms
1
I
I
I
V
V
V
V
V
V
V
I
I
I
I
I
V
V
V
V
I
C
C
E
C
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CE
CE
CB
CE
CC
= -1A, I
= -1A, I
= -1A, I
= -100μA, I
= -10mA, I
= -100μA, I
= -100mA, I
= -500mA, I
= -0.5A, I
= -5V, I
= -60V, I
= -60V, I
= -60V, V
= -5V, I
= -5V, I
= -5V, I
= -5V, I
= -10V, f = 1.0MHz
= -10V, I
= -10V
DC
B
B
B
= -100mA
= -100mA
= -50mA
C
C
C
C
C
B1
Test Condition
B
E
E
C
C
= 0
= -1mA
= -500mA
= -1A
= -1A
E
BE
10
B
B
= I
= 0
= 0
= 0, T
= -50mA, f = 100MHz
= 0
= 0
= -1mA
= -50mA
= 0
B2
Pw = 10ms
= -25mA
A
DSS5160V
= 150°C
© Diodes Incorporated
Pw = 1ms
March 2009
100