BC847BLP4-7 Diodes Inc, BC847BLP4-7 Datasheet - Page 2

• Manufacturer Part Number: BC847BLP4-7
• Description: TRANS NPN SS 45V 3-DFN
• Manufacturer: Diodes Inc

Specifications of BC847BLP4-7

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: 3-DFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: BC847BLP4-7; BC847BLP4DITR

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Notes:
BC847BLP4
Document number: DS31297 Rev. 6 - 2
4. Device mounted on FR-4 PCB.
5. Short duration pulse test used to minimize self-heating effect.
Characteristic (Note 5)
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
@T
A
= 25°C unless otherwise specified
A
= 25°C unless otherwise specified
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Symbol
V
2 of 5
V
BV
BV
BV
V
C
CE(sat)
BE(sat)
I
BE(on)
h
CBO
CBO
f
FE
CBO
CEO
EBO
T
T
Symbol
Symbol
J
V
V
V
R
, T
P
CBO
CEO
EBO
I
θ JA
C
D
STG
Min
200
580
100
50
45
—
—
—
—
—
—
—
6
Typ
350
200
700
900
640
725
3.0
80
—
—
—
—
—
—
Max
-55 to +150
450
250
600
700
770
5.0
15
—
—
—
—
—
—
—
Value
Value
100
250
500
6.0
50
45
Unit
MHz
mV
mV
mV
nA
µA
pF
—
V
V
V
Test Condition
I
I
I
V
I
I
I
I
V
V
V
V
V
f = 100MHz
V
C
C
E
C
C
C
C
CE
CE
CE
CB
CB
CE
CB
= 10μA, I
= 10mA, I
= 1μA, I
= 10mA, I
= 100mA, I
= 10mA, I
= 100mA, I
= 5.0V, I
= 5.0V, I
= 5.0V, I
= 30V
= 30V, T
= 5.0V, I
= 10V, f = 1.0MHz
BC847BLP4
C
© Diodes Incorporated
°C/W
B
Unit
Unit
= 0
mW
B
B
B
mA
February 2011
°C
C
C
C
C
A
V
V
V
= 0
B
B
= 0
= 0.5mA
= 0.5mA
= 2.0mA
= 2.0mA
= 10mA
= 150°C
= 10mA,
= 5.0mA
= 5.0mA