Mechanical Data
Features
Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
Operating and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air @ T
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
•
•
•
•
•
•
•
•
•
•
•
•
•
Notes:
DS30794 Rev. 4 - 2
Epitaxial Planar Die Construction
Complementary NPN Type Available (DCP56)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case: SOT-223
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
1.
2.
3.
4.
No purposefully added lead.
Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
A
= 25ºC (Note 3)
Characteristic
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
A
= 25ºC (Note 3)
DCP53-16
www.diodes.com
V
V
V
Symbol
V
V
1 of 4
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE (ON)
I
I
h
CBO
EBO
Symbol
Symbol
T
f
FE
T
V
V
V
j
, T
R
I
P
CBO
CEO
EBO
CM
I
θ JA
C
d
STG
-100
Min
100
-80
—
—
—
—
40
25
—
-5
Typ
200
—
—
—
—
—
—
—
—
—
-55 to +150
TOP VIEW
PNP SURFACE MOUNT TRANSISTOR
Value
Value
-100
-1.5
125
-80
-5
-1
1
Schematic and Pin Configuration
-100
Max
-0.5
-1.0
250
250
-20
-10
—
—
—
—
—
4
MHz
Unit
SOT-223
μA
μA
nA
—
V
V
V
V
V
DCP53/-16
DCP53/-16
3
I
I
I
V
V
T
V
I
I
I
I
I
I
f = 100MHz
C
C
E
C
C
C
C
C
C
CB
CB
A
EB
= -10mA, I
= -10μA, I
= -500mA, I
= -500mA, V
= -100μA, I
= -150mA, V
= -500mA, V
= -150mA, V
= -50mA, V
2
= 150ºC
= -5V, I
= -30V, I
= -30V, I
Test Condition
BASE
1
1
Units
°C/W
Unit
COLLECTOR
© Diodes Incorporated
°C
W
V
V
V
A
A
EMITTER
C
C
2,4
B
E
E
E
= 0
CE
3
B
= 0
= 0
= 0
= 0,
CE
CE
CE
CE
DCP53/-16
= 0
= -50mA
= -5V,
= -2V
= -2V
= -2V
= -2V