Mechanical Data
Features
Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Power Dissipation @T
Thermal Resistance, Junction to Ambient Air (Note 3) @T
Operating and Storage Temperature Range
Off Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
On Characteristics (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
AC Characteristics
Transition Frequency
Output Capacitance
Switching Times
•
•
•
•
•
•
•
•
•
•
•
•
Notes:
DS31308 Rev. 2 - 2
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 3 or in Diodes Inc. suggested pad layout document AP02001,
4. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic
A
= 25°C (Note 3)
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
A
V
V
V
V
Symbol
V
V
= 25°C
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
BE(ON)
C
I
I
h
CBO
EBO
t
t
f
off
FE
obo
on
T
www.diodes.com
Min
400
400
1 of 3
⎯
⎯
⎯
⎯
⎯
⎯
⎯
50
50
40
50
⎯
⎯
⎯
5
T
Symbol
Symbol
J
V
V
V
R
, T
I
P
0.075
CBO
CEO
EBO
CM
I
0.06
0.08
Typ
θ JA
110
100
138
175
C
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D
⎯
⎯
⎯
⎯
⎯
⎯
⎯
85
⎯
⎯
STG
Max
0.25
100
100
0.3
0.5
0.9
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
TOP VIEW
NPN SURFACE MOUNT TRANSISTOR
Schematic and Pin Configuration
MHz
Unit
nA
nA
pF
⎯
ns
ns
V
V
V
V
V
V
V
V
-55 to +150
4
Value
Value
400
400
125
Test Condition
I
I
I
V
V
I
I
I
I
V
V
V
V
V
V
V
I
0.5
C
C
E
C
C
C
C
B1
5
1
1
CB
EB
CE
CE
CE
CE
CE
CB
CC
= 20mA, I
= 50mA, I
= 100μA, I
= 10mA, I
= 100μA, I
= 100mA, I
= 100mA, I
SOT-223
= 10mA, I
= 4V, I
= 320V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, I
= 20V, I
= 20V, f = 1MHz
= 100V, I
3
BASE
C
C
C
C
B
B
B
C
C
2
C
E
= 0
= 100mA
= 1mA
= 100mA
B2
B
B
E
C
= 1mA
= 5mA
= 0
= 200mA
= 30mA, f = 30MHz
= 0
= 0
= 10mA
= 10mA
= 0
= 100mA
= -20mA
1
1
COLLECTOR
DZT658
EMITTER
2,4
© Diodes Incorporated
3
°C/W
Unit
Unit
°C
W
V
V
V
A
A
DZT658