DXT2011P5-13 Diodes Zetex, DXT2011P5-13 Datasheet - Page 4

• Manufacturer Part Number: DXT2011P5-13
• Description: TRANS NPN 100V 6A POWERDI5
• Manufacturer: Diodes Zetex

Specifications of DXT2011P5-13

• Transistor Type: NPN
• Current - Collector (ic) (max): 6A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 220mV @ 500mA, 5A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 3.2W
• Frequency - Transition: 130MHz
• Mounting Type: Surface Mount
• Package / Case: PowerDI™ 5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: DXT2011P5-13TR

Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage (Note 7)
Base-Emitter Saturation Voltage (Note 7)
Base-Emitter Turn-On Voltage (Note 7)
DC Current Gain (Note 7)
Transition Frequency
Output Capacitance
Switching Times
PowerDI is a registered trademark of Diodes Incorporated.
Notes:
DXT2011P5
Document number: DS32069 Rev. 2 - 2
7. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.
Characteristic
@T
A
= 25°C unless otherwise specified
V
V
V
Symbol
V
V
R≤1kΩ
V
(BR)CBO
(BR)CEO
(BR)EBO
I
C
I
I
CE(sat)
BE(sat)
BE(on)
h
www.diodes.com
CBO
CER
EBO
t
t
f
obo
on
off
FE
T
4 of 7
Min
200
100
100
100
30
10
⎯
⎯
7
−
−
−
−
−
−
−
−
−
−
−
−
−
1020
1010
Typ
235
115
180
920
230
200
130
8.1
21
50
95
60
20
26
41
−
−
−
−
−
1120
1000
Max
300
125
220
0.5
0.5
20
20
10
35
65
⎯
⎯
−
−
−
−
−
−
−
−
Diodes Incorporated
A Product Line of
Unit
MHz
mV
mV
mV
nA
μA
nA
μA
nA
pF
ns
V
V
V
−
I
I
I
V
V
V
V
V
I
I
I
I
I
V
V
V
V
V
V
f = 50MHz
V
V
I
C
C
E
C
C
C
C
C
B1
CB
CB
CB
CB
EB
CE
CE
CE
CE
CE
CE
CB
CC
= 100μA
= 0.1A, I
= 1A, I
= 5A, I
= 100μA
= 10mA
= 2A, I
= 5A, I
= I
= 10V, I
= 150V
= 150V, T
= 150V
= 150V, T
= 6V
= 2V, I
= 2V, I
= 2V, I
= 2V, I
= 2V, I
= 10V, f = 1MHz
= 10V, I
B2
= 100mA
B
B
B
B
Test Condition
B
= 100mA
= 500mA
= 100mA
= 500mA
C
C
C
C
C
C
=-5mA
C
= 10mA
= 2A
= 5A
= 5A
= 10A
= 100mA,
= 1A,
amb
amb
DXT2011P5
= 100 °C
= 100 °C
© Diodes Incorporated
March 2010