ZXTP2008ZTA Diodes Zetex, ZXTP2008ZTA Datasheet - Page 4
ZXTP2008ZTA
Manufacturer Part Number
ZXTP2008ZTA
Description
TRANS PNP LO SAT 30V 5.5A SOT89
Manufacturer
Diodes Zetex
Datasheet
1.ZXTP2008ZTA.pdf
(6 pages)
Specifications of ZXTP2008ZTA
Transistor Type
PNP
Current - Collector (ic) (max)
5.5A
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
175mV @ 500mA, 5.5A
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1A, 1V
Power - Max
2.1W
Frequency - Transition
110MHz
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
ZXTP2008ZTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
ELECTRICAL CHARACTERISTICS (at T
NOTES
* Measured under pulsed conditions. Pulse width
ZXTP2008Z
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage BV
Collector-emitter breakdown voltage BV
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
Output capacitance
Switching times
SYMBOL
BV
BV
I
I
R <1k
I
V
V
V
h
f
C
t
t
300 s; duty cycle
CBO
CER
EBO
T
ON
OFF
FE
CE(SAT)
BE(SAT)
BE(ON)
OBO
CBO
CER
CEO
EBO
amb
= 25°C unless otherwise stated)
MIN.
-7.0
100
100
-50
-50
-30
70
10
4
2%.
-860
TYP.
-130
-970
-8.0
225
200
145
110
230
-70
-70
-40
<-1
<-1
<-1
-25
-35
-55
-55
20
83
43
MAX.
-1070
-175
-960
-0.5
-0.5
300
-20
-20
-10
-40
-55
-80
-80
UNIT CONDITIONS
MHz
mV
mV
mV
mV
mV
mV
mV
nA
nA
nA
pF
ns
V
V
V
V
A
A
I
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
f = 50MHz
V
I
I
C
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
CB
CB
CB
EB
CB
= -100 A
= -5.5A, I
= -10mA, V
= -1A, V
= -100 A
= -1 A, RB <1k
= -10mA *
= -0.5A, I
= -1A, I
= -1A, I
= -2A, I
= -5.5A, I
= -5.5A, V
= -5A, V
= -20A, V
= -100mA, V
= -1A, V
= -I
= -6V
= -40V
= -40V,T
= -40V
= -40V,T
= -10V, f = 1MHz *
B2
ISSUE 1 - JUNE 2005
= -100mA
B
B
B
CE
CE
CC
B
= -100mA *
B
= -20mA *
= -200mA *
B
CE
CE
= -500mA *
amb
amb
= -1V *
= -1V *
= -20mA *
=-500mA *
= -10V,
CE
= -1V *
CE
= -1V *
= -1V *
=100°C
=100°C
= -10V