FMMT413TD Diodes Zetex, FMMT413TD Datasheet

TRANSISTOR AVALANCHE NPN SOT23-3

FMMT413TD

Manufacturer Part Number
FMMT413TD
Description
TRANSISTOR AVALANCHE NPN SOT23-3
Manufacturer
Diodes Zetex
Datasheet

Specifications of FMMT413TD

Transistor Type
NPN - Avalanche Mode
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
150mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 10mA, 10V
Power - Max
330mW
Frequency - Transition
150MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
FMMT413TD
FMMT413TDTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FMMT413TD
Manufacturer:
DIODES/美台
Quantity:
20 000
FMMT413
SOT23 NPN silicon planar avalanche transistor
Summary
V
Description
The FMMT413 is a NPN silicon planar bipolar transistor optimized for
avalanche mode operation. Tight process control and low inductance
packaging combine to produce high current pulses with fast edges, ideal
for laser diode driving.
Features
Applications
Ordering information
Device marking
413
Issue 3 - March 2006
© Zetex Semiconductors plc 2006
Device
FMMT413TD
FMMT413TA
(BR)CES
Avalanche mode operation
50A peak avalanche current
Low inductance packaging
Laser LED drivers
Fast edge generation
High speed pulse generators
= 150V, V
(BR)CEO
Reel size
(inches)
7
7
= 50V, I
USB
Tape width
= 25A
(mm)
8
8
1
Quantity per
3,000
reel
500
C
Pinout - top view
B
www.zetex.com
E
C
B
E

Related parts for FMMT413TD

FMMT413TD Summary of contents

Page 1

... Low inductance packaging Applications • Laser LED drivers • Fast edge generation • High speed pulse generators Ordering information Device Reel size (inches) FMMT413TD 7 FMMT413TA 7 Device marking 413 Issue 3 - March 2006 © Zetex Semiconductors plc 2006 = 25A USB Tape width Quantity per ...

Page 2

Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current (25ns Pulse Width) Continuous collector current Power dissipation at T =25°C amb Linear derating factor Operating and storage temperature range Thermal resistance Parameter Junction to ambient Issue ...

Page 3

Electrical characteristics (at T Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage Base-emitter saturation voltage Current in second breakdown (pulsed) Static forward current transfer ratio Collector-emitter ...

Page 4

Typical characteristics Issue 3 - March 2006 © Zetex Semiconductors plc 2006 C =2x4.7nF CE T =25°C C =4.7nF AMB CE I =5mA/ns B p.r.f.=10kHz C =2.2nF CE C =1.0nF CE 100 150 ...

Page 5

Issue 3 - March 2006 © Zetex Semiconductors plc 2006 Intentionally left blank 5 FMMT413 www.zetex.com ...

Page 6

Package outline - SOT23 leads Dim. Millimeters Min. Max. A 2.67 3.05 B 1.20 1. 1.10 D 0.37 0.53 F 0.085 0.15 G 1.90 NOM Note: Controlling dimensions are in millimeters. Approximate ...

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