BCP56-16,115 NXP Semiconductors, BCP56-16,115 Datasheet - Page 10

• Manufacturer Part Number: BCP56-16,115
• Description: TRANSISTOR NPN 80V 1A SOT223
• Manufacturer: NXP Semiconductors

Specifications of BCP56-16,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 960mW
• Frequency - Transition: 180MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 960 mW
• Maximum Operating Frequency: 180 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-5009-2; 933917260115; BCP56-16 T/R; BCP56-16 T/R; BCP56-16,115

NXP Semiconductors
BC639_BCP56_BCX56_8
Product data sheet
Fig 10. DC current gain as a function of collector
Fig 12. Base-emitter voltage as a function of collector
(1) T
(2) T
(3) T
V
(1) T
(2) T
(3) T
h
(V)
FE
BE
300
200
100
1.2
0.8
0.4
0
0
10
10
V
current; typical values
V
current; typical values
amb
amb
amb
amb
amb
amb
CE
CE
1
1
= 2 V
= 2 V
= 150 C
= 25 C
= 55 C
= 55 C
= 25 C
= 150 C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
10
10
2
2
10
10
006aaa080
006aaa081
3
3
I
I
C
C
(mA)
(mA)
10
10
Rev. 08 — 22 June 2007
4
4
Fig 11. Collector current as a function of
Fig 13. Collector-emitter saturation voltage as a
V
(1) T
(2) T
(3) T
CEsat
(A)
(V)
I
10
10
C
1.6
1.2
0.8
0.4
BC639; BCP56; BCX56
0
1
1
2
10
T
collector-emitter voltage; typical values
I
function of collector current; typical values
C
0
amb
amb
amb
amb
/I
1
B
80 V, 1 A NPN medium power transistors
= 10
= 25 C
= 150 C
= 25 C
= 55 C
I
B
0.4
(mA) = 50
1
0.8
10
45
(1)
(2)
40
10
1.2
(3)
2
35
30
© NXP B.V. 2007. All rights reserved.
10
1.6
006aaa082
006aaa084
3
V
I
C
CE
(mA)
(V)
25
20
15
10
5
10
2.0
4
10 of 15