BSP62,115 NXP Semiconductors, BSP62,115 Datasheet - Page 2
![TRANS PNP 80V 500MA SOT223](/photos/1/39/13965/568-sot-223_sc-73_sot223-1_sml.jpg)
BSP62,115
Manufacturer Part Number
BSP62,115
Description
TRANS PNP 80V 500MA SOT223
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.BSP62115.pdf
(7 pages)
Specifications of BSP62,115
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1.3V @ 500µA, 500mA
Current - Collector Cutoff (max)
50nA
Dc Current Gain (hfe) (min) @ Ic, Vce
2000 @ 500mA, 10V
Power - Max
1.25W
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
90 V
Maximum Dc Collector Current
1 A
Power Dissipation
1.25 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
- 1 A
Dc Collector/base Gain Hfe Min
1000
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933969480115
BSP62 T/R
BSP62 T/R
BSP62 T/R
BSP62 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSP62,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
FEATURES
• High current (max. 0.5 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
APPLICATIONS
• Industrial switching applications such as:
DESCRIPTION
PNP Darlington transistor in a SOT223 plastic package.
NPN complements: BSP50, BSP51 and BSP52.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2001 May 31
V
V
V
I
I
I
P
T
T
T
C
CM
B
SYMBOL
– Print hammer
– Solenoid
– Relay and lamp drivers.
stg
j
amb
CBO
CES
EBO
tot
PNP Darlington transistors
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
BSP60
BSP61
BSP62
BSP60
BSP61
BSP62
PARAMETER
open emitter
V
open collector
T
amb
BE
= 0
2
≤ 25 °C; note 1
PINNING
CONDITIONS
Top view
PIN
2, 4
Fig.1 Simplified outline (SOT223) and symbol.
1
3
1
2
base
collector
emitter
4
BSP60; BSP61; BSP62
3
MAM266
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
DESCRIPTION
1
−60
−80
−90
−45
−60
−80
−5
−1
−2
−100
1.25
+150
150
+150
Product data sheet
MAX.
3
V
V
V
V
V
V
V
A
A
mA
W
°C
°C
°C
2
.
UNIT
2, 4