MMBT3904WT1G ON Semiconductor, MMBT3904WT1G Datasheet - Page 3
MMBT3904WT1G
Manufacturer Part Number
MMBT3904WT1G
Description
TRANS GP SS NPN 40V SOT323
Manufacturer
ON Semiconductor
Type
General Purposer
Specifications of MMBT3904WT1G
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
150mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
150 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40 at 0.1 mA at 1 V
Minimum Operating Temperature
- 55 C
Current, Collector
200 mA
Current, Gain
30
Frequency
300 MHz
Package Type
SC-70 (SOT-323)
Polarity
NPN
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Collector To Base
60 V
Voltage, Collector To Emitter
40 V
Voltage, Collector To Emitter, Saturation
0.3 V
Voltage, Emitter To Base
6 V
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage
60V
Emitter-base Voltage
6V
Collector Current (dc) (max)
200mA
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT3904WT1GOS
MMBT3904WT1GOS
MMBT3904WT1GOSTR
MMBT3904WT1GOS
MMBT3904WT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT3904WT1G
Manufacturer:
ON Semiconductor
Quantity:
800
Company:
Part Number:
MMBT3904WT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBT3904WT1G
Manufacturer:
ON/安森美
Quantity:
20 000
- 0.5 V
ELECTRICAL CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small −Signal Current Gain
Output Admittance
Noise Figure
Delay Time
Rise Time
Storage Time
Fall Time
DUTY CYCLE = 2%
300 ns
(I
(I
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
Characteristic
C
C
CB
CB
EB
EB
CE
CE
CE
CE
CE
CE
CE
CE
CE
CE
= 10 mAdc, V
= −10 mAdc, V
= 0.5 Vdc, I
= −0.5 Vdc, I
= 5.0 Vdc, I
= −5.0 Vdc, I
= 10 Vdc, I
= −10 Vdc, I
= 10 Vdc, I
= −10 Vdc, I
= 10 Vdc, I
= −10 Vdc, I
= 10 Vdc, I
= −10 Vdc, I
= 5.0 Vdc, I
= −5.0 Vdc, I
Figure 1. Delay and Rise Time
C
C
C
C
C
CE
E
C
C
C
C
C
Equivalent Test Circuit
CE
E
C
C
= 1.0 mAdc, f = 1.0 kHz)
= 1.0 mAdc, f = 1.0 kHz)
= 1.0 mAdc, f = 1.0 kHz)
= 1.0 mAdc, f = 1.0 kHz)
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= 100 mAdc, R
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
+10.9 V
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= 20 Vdc, f = 100 MHz)
= −100 mAdc, R
< 1 ns
= −20 Vdc, f = 100 MHz)
(V
(V
(I
(I
(V
(V
(I
(I
C
C
B1
B1
CC
CC
CC
CC
= 10 mAdc, I
= −10 mAdc, I
= I
= I
= 3.0 Vdc, V
= −3.0 Vdc, V
= 3.0 Vdc, I
= −3.0 Vdc, I
10 k
B2
B2
= 1.0 mAdc)
= −1.0 mAdc)
S
Characteristic
= 1.0 k W, f = 1.0 kHz)
S
= 1.0 k W, f = 1.0 kHz)
(T
B1
C
B1
A
BE
C
= 1.0 mAdc)
= 10 mAdc)
BE
= 25°C unless otherwise noted) (Continued)
* Total shunt capacitance of test jig and connectors
= −1.0 mAdc)
= −10 mAdc)
= − 0.5 Vdc)
+3 V
= 0.5 Vdc)
Condition
275
C
S
http://onsemi.com
< 4 pF*
MMBT3904WT1
10 < t
DUTY CYCLE = 2%
1
3
< 500 ms
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
MMBT3904WT1
MMBT3906WT1
0
- 9.1 V
t
1
Figure 2. Storage and Fall Time
+10.9 V
< 1 ns
Symbol
Symbol
Equivalent Test Circuit
C
C
h
NF
h
h
h
f
t
obo
t
t
t
ibo
oe
T
re
fe
d
s
ie
r
f
1N916
10 k
Min
300
250
100
100
Min
1.0
2.0
0.5
0.1
1.0
3.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
10.0
Max
400
400
200
225
+3 V
4.0
4.5
8.0
8.0
5.0
4.0
10
12
10
40
60
35
35
35
35
50
75
−
−
275
C
S
X 10
mmhos
Unit
MHz
Unit
< 4 pF*
k W
dB
pF
pF
ns
ns
−
− 4