MMBT2907AWT1G ON Semiconductor, MMBT2907AWT1G Datasheet - Page 2

• Manufacturer Part Number: MMBT2907AWT1G
• Description: TRANS GP SS PNP 60V SOT323
• Manufacturer: ON Semiconductor

Specifications of MMBT2907AWT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 150mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: - 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 75 at 0.1 mA at 10 V
• Minimum Operating Temperature: - 55 C
• Collector Emitter Voltage V(br)ceo: -60V
• Transition Frequency Typ Ft: 200MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: -600mA
• Dc Current Gain Hfe: 200
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT2907AWT1GOSTR

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain (Note 2)
Collector −Emitter Saturation Voltage (Note 2)
Base −Emitter Saturation Voltage (Note 2)
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
Turn−On Time
Delay Time
Rise Time
Storage Time
Fall Time
Turn−Off Time
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
C
C
E
C
C
C
C
C
C
C
C
C
C
CE
CE
CB
EB
= −10 mAdc, I
= −10 mAdc, I
= −10 mAdc, I
= −0.1 mAdc, V
= −1.0 mAdc, V
= −10 mAdc, V
= −150 mAdc, V
= −500 mAdc, V
= −150 mAdc, I
= −500 mAdc, I
= −150 mAdc, I
= −500 mAdc, I
= −50 mAdc, V
= −2.0 Vdc, I
= −30 Vdc, V
= −30 Vdc, V
= −10 Vdc, I
C
B
E
E
CE
CE
C
= 0)
EB(off)
EB(off)
B
B
B
B
CE
CE
= 0)
= 0)
CE
CE
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= −15 mAdc)
= −50 mAdc)
= −15 mAdc)
= −50 mAdc)
= −10 Vdc)
= 20 Vdc, f = 100 MHz)
= −10 Vdc)
= −10 Vdc)
(3)
= −10 Vdc)
= −10 Vdc)
= −0.5 Vdc)
= −0.5 Vdc)
Characteristic
(T
A
= 25°C unless otherwise noted)
(V
I
C
CC
= −150 mAdc, I
= −6.0 Vdc, I
I
B1
http://onsemi.com
(V
= I
CC
B2
= −30 Vdc,
= 15 mAdc)
C
2
B1
= −150 mAdc,
= −15 mAdc)
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
I
H
C
CEX
I
t
t
f
BL
obo
on
t
t
t
t
off
ibo
FE
T
d
s
r
f
−5.0
Min
−60
−60
100
100
100
200
75
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
−0.4
−1.6
−1.3
−2.6
−50
−50
100
8.0
30
45
10
40
80
30
−
−
−
−
−
−
−
−
−
nAdc
nAdc
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
ns
−