MMBT5401LT1G ON Semiconductor, MMBT5401LT1G Datasheet
MMBT5401LT1G
Specifications of MMBT5401LT1G
MMBT5401LT1GOS
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MMBT5401LT1G Summary of contents
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... R 556 °C/W qJA P 300 mW D 2.4 mW/°C R 417 °C/W qJA −55 to +150 °C J stg MMBT5401LT1G MMBT5401LT3G †For information on tape and reel specifications, 1 http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER MARKING DIAGRAM SOT−23 (TO−236) G CASE 318 1 STYLE Specific Device Code M ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = −1.0 mAdc Collector −Base Breakdown Voltage (I = −100 mAdc Emitter −Base Breakdown Voltage (I = −10 mAdc, I ...
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T = 125°C J 100 25° 55° 0.1 0.2 0.3 0.5 1.0 0.9 0.8 0 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0. ...
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0.15 0.13 150°C 0.10 25°C 0.08 −55°C 0.05 0.03 0 0.0001 0.001 I , COLLECTOR CURRENT (A) C Figure 4. Collector Emitter Saturation Voltage vs. Collector Current 1 ...
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700 25°C 500 J 300 200 100 BE(off 120 0.2 0.3 0.5 1.0 2.0 3.0 5.0 ...
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... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...