PN2222ARLRAG ON Semiconductor, PN2222ARLRAG Datasheet - Page 5

TRANS GP SS NPN 600MA 40V TO92

PN2222ARLRAG

Manufacturer Part Number
PN2222ARLRAG
Description
TRANS GP SS NPN 600MA 40V TO92
Manufacturer
ON Semiconductor
Datasheet

Specifications of PN2222ARLRAG

Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
625mW
Frequency - Transition
300MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.6 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
625 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
35 at 0.1 mA at 10 V
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
PN2222ARLRAGOS
PN2222ARLRAGOS
PN2222ARLRAGOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PN2222ARLRAG
Manufacturer:
ON
Quantity:
32 000
1.0
0.8
0.6
0.4
0.2
8.0
4.0
2.0
7.0
5.0
3.0
2.0
6.0
10
30
20
10
0
0
0.01 0.02 0.05
0.1
0.1
V
V
V
T
CE(sat)
BE(sat)
BE(on)
0.2
J
= 25°C
0.2 0.3 0.5 0.7
@ V
@ I
@ I
0.5
C
C
CE
/I
/I
Figure 7. Frequency Effects
B
B
1.0 2.0
I
500 mA, R
100 mA, R
50 mA, R
0.1
= 10 V
C
Figure 11. “On” Voltages
= 10
= 10
I
= 1.0 mA, R
C
Figure 9. Capacitances
, COLLECTOR CURRENT (mA)
REVERSE VOLTAGE (VOLTS)
0.2
1.0
f, FREQUENCY (kHz)
S
S
S
= 4.0 kW
5.0 10 20
= 200 W
= 2.0 kW
0.5
S
= 150 W
2.0 3.0 5.0 7.0 10
1.0 2.0
C
eb
50
5.0 10
R
R
R
S
S
S
100 200
= OPTIMUM
=
=
SOURCE
RESISTANCE
1.0 V
20
20 30
C
cb
http://onsemi.com
500 1.0 k
50
100
50
5
300
200
100
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
500
+0.5
8.0
4.0
2.0
6.0
10
70
50
0
0
50
1.0
0.1
Figure 10. Current−Gain Bandwidth Product
100 200
0.2
Figure 8. Source Resistance Effects
2.0
Figure 12. Temperature Coefficients
f = 1.0 kHz
0.5
V
T
CE
J
3.0
I
100 mA
500 mA
1.0 mA
C
R
= 25°C
S
= 50 mA
I
= 20 V
C
1.0 2.0
I
500 1.0 k 2.0 k
, SOURCE RESISTANCE (OHMS)
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
5.0 7.0
5.0
10
R
R
10
qVC
qVB
5.0 k 10 k 20 k
for V
for V
20
20
CE(sat)
BE
30
50
100 200
50
50 k 100 k
70 100
500

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