PN2222ARLRAG ON Semiconductor, PN2222ARLRAG Datasheet - Page 5
![TRANS GP SS NPN 600MA 40V TO92](/photos/5/32/53267/to-92-3_standardbody__to-226_bentlead_sml.jpg)
PN2222ARLRAG
Manufacturer Part Number
PN2222ARLRAG
Description
TRANS GP SS NPN 600MA 40V TO92
Manufacturer
ON Semiconductor
Datasheet
1.PN2222ARLRAG.pdf
(6 pages)
Specifications of PN2222ARLRAG
Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
625mW
Frequency - Transition
300MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.6 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
625 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
35 at 0.1 mA at 10 V
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
PN2222ARLRAGOS
PN2222ARLRAGOS
PN2222ARLRAGOSTR
PN2222ARLRAGOS
PN2222ARLRAGOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PN2222ARLRAG
Manufacturer:
ON
Quantity:
32 000
1.0
0.8
0.6
0.4
0.2
8.0
4.0
2.0
7.0
5.0
3.0
2.0
6.0
10
30
20
10
0
0
0.01 0.02 0.05
0.1
0.1
V
V
V
T
CE(sat)
BE(sat)
BE(on)
0.2
J
= 25°C
0.2 0.3 0.5 0.7
@ V
@ I
@ I
0.5
C
C
CE
/I
/I
Figure 7. Frequency Effects
B
B
1.0 2.0
I
500 mA, R
100 mA, R
50 mA, R
0.1
= 10 V
C
Figure 11. “On” Voltages
= 10
= 10
I
= 1.0 mA, R
C
Figure 9. Capacitances
, COLLECTOR CURRENT (mA)
REVERSE VOLTAGE (VOLTS)
0.2
1.0
f, FREQUENCY (kHz)
S
S
S
= 4.0 kW
5.0 10 20
= 200 W
= 2.0 kW
0.5
S
= 150 W
2.0 3.0 5.0 7.0 10
1.0 2.0
C
eb
50
5.0 10
R
R
R
S
S
S
100 200
= OPTIMUM
=
=
SOURCE
RESISTANCE
1.0 V
20
20 30
C
cb
http://onsemi.com
500 1.0 k
50
100
50
5
300
200
100
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
500
+0.5
8.0
4.0
2.0
6.0
10
70
50
0
0
50
1.0
0.1
Figure 10. Current−Gain Bandwidth Product
100 200
0.2
Figure 8. Source Resistance Effects
2.0
Figure 12. Temperature Coefficients
f = 1.0 kHz
0.5
V
T
CE
J
3.0
I
100 mA
500 mA
1.0 mA
C
R
= 25°C
S
= 50 mA
I
= 20 V
C
1.0 2.0
I
500 1.0 k 2.0 k
, SOURCE RESISTANCE (OHMS)
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
5.0 7.0
5.0
10
R
R
10
qVC
qVB
5.0 k 10 k 20 k
for V
for V
20
20
CE(sat)
BE
30
50
100 200
50
50 k 100 k
70 100
500