MPSA05RLRAG ON Semiconductor, MPSA05RLRAG Datasheet - Page 4

• Manufacturer Part Number: MPSA05RLRAG
• Description: TRANS NPN GP SS 60V TO92
• Manufacturer: ON Semiconductor

Specifications of MPSA05RLRAG

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 4 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 625 W
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100 at 10 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 60V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 4V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 100
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MPSA05RLRAGOS; MPSA05RLRAGOS; MPSA05RLRAGOSTR

1.0 k
700
500
300
200
100
400
200
100
1.0
0.8
0.6
0.4
0.2
70
50
30
20
10
80
60
40
0
0.5
1.0
0.5
T
J
Figure 8. MPSA05/06 Active−Region Safe
1.0
= 25°C
V
1.0
Figure 10. MPSA05/06 DC Current Gain
CE(sat)
T
T
Figure 12. MPSA05/06 “ON” Voltages
2.0
A
J
V
= 25°C
= 125°C
CE
2.0
2.0
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
@ I
3.0
−55°C
3.0 5.0
25°C
C
I
V
I
/I
C
C
BE(on)
V
B
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
BE(sat)
5.0
= 10
5.0
Operating Area
NPN − MPSA05, MPSA06*; PNP − MPSA55, MPSA56*
@ V
7.0
@ I
10
10
CE
C
NPN
/I
T
MPSA05
10
= 1.0 V
B
C
= 10
20
= 25°C
20
30 50
20
50
MPSA06
1.0 s
30
100
100
1.0 ms
V
CE
50
200 300
200
100 ms
= 1.0 V
http://onsemi.com
70
500
100
500
4
−1.0 k
−700
−500
−300
−200
−100
−1.0
−0.8
−0.6
−0.4
−0.2
−70
−50
−30
−20
−10
400
200
100
80
60
40
0
−0.5
−0.5
−1.0
T
J
−1.0
−1.0
Figure 9. MPSA55/56 Active−Region Safe
= 25°C
V
Figure 11. MPSA55/56 DC Current Gain
CE(sat)
−2.0
Figure 13. MPSA55/56 “ON” Voltages
T
T
A
J
V
= 25°C
CE
= 125°C
−2.0
−2.0
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
@ I
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
−3.0
−55°C
25°C
C
V
I
I
V
/I
BE(on)
C
C
B
BE(sat)
, COLLECTOR CURRENT (mA)
−5.0
, COLLECTOR CURRENT (mA)
= 10
−5.0
−5.0
Operating Area
@ V
@ I
−7.0
−10
−10
CE
C
MPSA55
/I
PNP
B
−10
= −1.0 V
T
= 10
C
−20
−20
= 25°C
−20
−50
−50
MPSA56
1.0 s
−30
−100
−100
V
1.0 ms
−50
CE
−200
−200
= −1.0 V
100 ms
−70
−100
−500
−500