NSL12AWT1G ON Semiconductor, NSL12AWT1G Datasheet
NSL12AWT1G
Manufacturer Part Number
NSL12AWT1G
Description
TRANS PNP BIPOLAR 12V 3A SC-88
Manufacturer
ON Semiconductor
Datasheet
1.NSL12AWT1G.pdf
(4 pages)
Specifications of NSL12AWT1G
Transistor Type
PNP
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
12V
Vce Saturation (max) @ Ib, Ic
290mV @ 20mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 800mA, 1.5 V
Power - Max
450mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NSL12AWT1GOS
NSL12AWT1GOS
NSL12AWT1GOSTR
NSL12AWT1GOS
NSL12AWT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NSL12AWT1G
Manufacturer:
ON
Quantity:
12 000
Company:
Part Number:
NSL12AWT1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
NSL12AWT1G
Manufacturer:
ON
Quantity:
30 068
Part Number:
NSL12AWT1G
Manufacturer:
ON/安森美
Quantity:
20 000
NSL12AWT1G
High Current Surface Mount
PNP Silicon Low V
Transistor for Battery
Operated Applications
Features
•
•
•
•
•
Benefits
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4, Minimum Pad, 1 oz Coverage
2. FR−4, 1″ Pad, 1 oz Coverage
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 3
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current
Electrostatic Discharge
Total Device Dissipation
Thermal Resistance,
Total Device Dissipation
Thermal Resistance,
Thermal Resistance,
Total Device Dissipation
Junction and Storage
Compliant
High Specific Current and Power Capability Reduces Required PCB Area
High Current Capability (3 A)
High Power Handling (Up to 650 mW)
Low V
Small Size
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Reduced Parasitic Losses Increases Battery Life
T
Derate above 25°C
Junction−to−Ambient
T
Derate above 25°C
Junction−to−Ambient
Junction−to−Lead 6
(Single Pulse < 10 sec.)
Temperature Range
A
A
= 25°C
= 25°C
Characteristic
CE(s)
Rating
(170 mV Typical @ 1 A)
− Peak
(T
A
= 25°C)
R
R
P
P
qJA
qJA
P
D
D
Symbol
Symbol
T
D
V
V
V
ESD
(Note 1)
(Note 2)
R
J
I
(Note 1)
(Note 2)
Single
CEO
CBO
EBO
, T
I
CM
qJL
C
stg
CE(sat)
−55 to +150
Max
−5.0
−2.0
−3.0
Max
−12
−12
450
275
650
192
105
HBM Class 3
3.6
5.2
1.4
MM Class C
1
mW/°C
mW/°C
°C/W
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
mW
mW
°C
W
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
(Note: Microdot may be in either location)
ORDERING INFORMATION
PNP TRANSISTOR
M
G
BASE
MARKING DIAGRAM
1
http://onsemi.com
3
12 VOLTS
6
1
3.0 AMPS
= Date Code
= Pb−Free Package
COLLECTOR
EMITTER
1, 2, 5, 6
11 MG
Publication Order Number:
SC−88/SOT−363
G
4
CASE 419B
STYLE 20
NSL12AW/D
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NSL12AWT1G Summary of contents
Page 1
... NSL12AWT1G High Current Surface Mount PNP Silicon Low V Transistor for Battery Operated Applications Features • High Current Capability (3 A) • High Power Handling (Up to 650 mW) • Low V (170 mV Typical @ 1 A) CE(s) • Small Size • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS ...
Page 2
... 1.0 MHz Pulsed Condition: Pulse Width < 300 msec, Duty Cycle < 2% ORDERING INFORMATION Device NSL12AWT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 0.5 0.4 0.3 ...
Page 3
T = −55° 0.001 0.01 0 COLLECTOR CURRENT (AMPS) C Figure 3. DC Current Gain versus Collector Current 1.0 0.9 0.8 0.7 0.6 0.001 0.01 0 COLLECTOR CURRENT ...
Page 4
... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...