NSS12501UW3T2G ON Semiconductor, NSS12501UW3T2G Datasheet - Page 4

• Manufacturer Part Number: NSS12501UW3T2G
• Description: TRANS NPN 12V 7A 3-WDFN
• Manufacturer: ON Semiconductor

Specifications of NSS12501UW3T2G

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 12V
• Vce Saturation (max) @ Ib, Ic: 120mV @ 400mA, 4A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2A, 2V
• Power - Max: 875mW
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Package / Case: 3-VDFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: NSS12501UW3T2GOSTR

675
625
575
525
475
425
375
325
275
0
1.0
V
EB
Figure 7. Input Capacitance
, EMITTER BASE VOLTAGE (V)
2.0
0.01
3.0
0.1
10
1
0.01
Single Pulse Test
at T
4.0
amb
Figure 9. Safe Operating Area
C
= 25°C
ibo
0.1
5.0
NSS12501UW3T2G
(pF)
http://onsemi.com
V
6.0
CE
4
1.0
(V
dc
140
130
120
100
)
110
90
80
70
0
1.0
10
10 mS
100 mS
1.0 S
Thermal
Limit
1.0 mS
V
2.0
CB
Figure 8. Output Capacitance
, COLLECTOR BASE VOLTAGE (V)
3.0
100
4.0
5.0
6.0
7.0
8.0
C
obo
(pF)
9.0
10