MMBTA63LT1G ON Semiconductor, MMBTA63LT1G Datasheet - Page 2
![TRANS SS DARL PNP 30V SOT23](/photos/1/38/13877/sot-23-3_to-236-3_micro3_ssd3_sst3_sml.jpg)
MMBTA63LT1G
Manufacturer Part Number
MMBTA63LT1G
Description
TRANS SS DARL PNP 30V SOT23
Manufacturer
ON Semiconductor
Datasheet
1.MMBTA63LT1G.pdf
(4 pages)
Specifications of MMBTA63LT1G
Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1.5V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
10000 @ 100mA, 5V
Power - Max
225mW
Frequency - Transition
125MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
30 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.1 uA
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
- 0.5 A
Dc Collector/base Gain Hfe Min
5000
Minimum Operating Temperature
- 55 C
Rohs Compliant
YES
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBTA63LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBTA63LT1G
Manufacturer:
ON Semiconductor
Quantity:
30 531
Company:
Part Number:
MMBTA63LT1G
Manufacturer:
ON
Quantity:
12 500
Company:
Part Number:
MMBTA63LT1G
Manufacturer:
INF
Quantity:
5 825
Part Number:
MMBTA63LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 3)
Collector −Emitter Saturation Voltage
Base − Emitter On Voltage
Current −Gain − Bandwidth Product
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
C
C
C
C
C
C
C
C
CB
EB
= −100 mAdc)
= −10 mAdc, V
= −10 mAdc, V
= −100 mAdc, V
= −100 mAdc, V
= −100 mAdc, I
= −100 mAdc, V
= −10 mAdc, V
= −10 Vdc)
= −30 Vdc)
CE
CE
CE
B
CE
CE
CE
= −0.1 mAdc)
= −5.0 Vdc)
= −5.0 Vdc)
= −5.0 Vdc, f = 100 MHz)
= −5.0 Vdc)
= −5.0 Vdc)
= −5.0 Vdc)
Characteristic
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
2
MMBTA63
MMBTA64
MMBTA63
MMBTA64
V
Symbol
V
V
(BR)CEO
CE(sat)
I
I
BE(on)
CBO
h
EBO
f
FE
T
10,000
10,000
20,000
5,000
Min
−30
125
−
−
−
−
−100
−100
Max
−1.5
−2.0
−
−
−
−
−
−
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
−