MPS751G ON Semiconductor, MPS751G Datasheet - Page 3

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MPS751G

Manufacturer Part Number
MPS751G
Description
TRANS AMP PNP 2A 60V TO-92
Manufacturer
ON Semiconductor
Type
Amplifierr
Datasheets

Specifications of MPS751G

Transistor Type
PNP
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
500mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
75 @ 1A, 2V
Power - Max
625mW
Frequency - Transition
75MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Current, Collector
2 A
Current, Gain
40
Frequency
75 MHz
Package Type
TO-92
Polarity
PNP
Power Dissipation
1.5 W
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
60 V
Voltage, Collector To Base
80 V
Voltage, Collector To Emitter
60 V
Voltage, Collector To Emitter, Saturation
0.5 V
Voltage, Emitter To Base
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Other names
MPS751G
MPS751GOS

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Company
Part Number
Manufacturer
Quantity
Price
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Manufacturer:
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Part Number:
MPS751G
Manufacturer:
ON/安森美
Quantity:
20 000
0.05
0.02
0.01
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
4.0
2.0
1.0
0.5
0.2
0.1
10
0
0
0.05
1.0
50
0.1 0.2
I
C
T
A
= 10 mA I
2.0
= 25°C
V
CE
Figure 7. MPS650, MPS651 SOA,
100
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Collector Saturation Region
Figure 5. MPS650, MPS651
Figure 3. MPS650, MPS651
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.5 1.0 2.0
I
C
, COLLECTOR CURRENT (mA)
C
Safe Operating Area
= 100 mA
I
B
200
5.0
, BASE CURRENT (mA)
On Voltages
V
NPN − MPS650, MPS651; PNP − MPS750, MPS751
BE(on)
V
NPN
NPN
NPN
BE(sat)
10
MPS65
I
MPS65
C
5.0 10 20
V
@ V
500
CE(sat)
= 500 mA
0
1
@ I
CE
T
C
1.0 ms
= 2.0 V
C
/I
@ I
20
B
= 25°C
1.0 A
= 10
C
/I
B
= 10
T
50 100 200 500
I
J
C
= 25°C
= 2.0 A
2.0 A
50
100 ms
http://onsemi.com
4.0 A
100
3
−0.05
−0.02
−0.01
−2.0
−1.8
−1.6
−1.4
−1.2
−1.0
−0.8
−0.6
−0.4
−0.2
−4.0
−2.0
−1.0
−0.5
−0.2
−0.1
−1.0
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
−10
0
0
−0.05
−1.0
−50
−0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20
I
T
C
A
−2.0
= −10 mA
= 25°C
V
Figure 8. MPS750, MPS751 SOA,
CE
−100
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Collector Saturation Region
Figure 4. MPS750, MPS751
Figure 6. MPS750, MPS751
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
I
C
, COLLECTOR CURRENT (mA)
Safe Operating Area
I
−5.0
−200
B
, BASE CURRENT (mA)
I
C
On Voltages
= −100 mA
V
CE(sat)
PNP
PNP
PNP
−10
MPS75
V
MPS75
BE(sat)
0
−500
1
I
V
C
@ I
BE(on)
= −500 mA
1.0 ms
@ I
C
T
−20
C
/I
B
= 25°C
C
@ V
−1.0 A
= 10
/I
B
= 10
CE
−50 −100 −200 −500
= 2.0 V
−2.0 A
100 ms
T
−50
J
I
C
= 25°C
= −2.0 A
−4.0 A
−100

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