MPSA06G ON Semiconductor, MPSA06G Datasheet - Page 4
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MPSA06G
Manufacturer Part Number
MPSA06G
Description
TRANS NPN GP BIPO LP 80V TO-92
Manufacturer
ON Semiconductor
Type
Amplifierr
Specifications of MPSA06G
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
250mV @ 10mA, 100mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 1V
Power - Max
625mW
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage(max)
80V
Emitter-base Voltage (max)
4V
Collector Current (dc) (max)
500mA
Dc Current Gain (min)
100
Power Dissipation
625mW
Frequency (max)
100MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Configuration
Single
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
4 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100 at 10 mA at 1 V
Minimum Operating Temperature
- 55 C
Current, Collector
500 mA
Current, Gain
100
Frequency
100 MHz
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Collector To Base
80 V
Voltage, Collector To Emitter
80 V
Voltage, Collector To Emitter, Saturation
0.25 V
Voltage, Emitter To Base
4 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MPSA06G
MPSA06GOS
MPSA06GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MPSA06G
Manufacturer:
ON
Quantity:
15 000
Part Number:
MPSA06G
Manufacturer:
ON/安森美
Quantity:
20 000
1.0 k
700
500
300
200
100
400
200
100
1.0
0.8
0.6
0.4
0.2
70
50
30
20
10
80
60
40
0
0.5
1.0
0.5
T
J
Figure 8. MPSA05/06 Active−Region Safe
1.0
= 25°C
V
1.0
Figure 10. MPSA05/06 DC Current Gain
CE(sat)
T
T
Figure 12. MPSA05/06 “ON” Voltages
2.0
A
J
V
= 25°C
= 125°C
CE
2.0
2.0
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
@ I
3.0
−55°C
3.0 5.0
25°C
C
I
V
I
/I
C
C
BE(on)
V
B
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
BE(sat)
5.0
= 10
5.0
Operating Area
NPN − MPSA05, MPSA06*; PNP − MPSA55, MPSA56*
@ V
7.0
@ I
10
10
CE
C
NPN
/I
T
MPSA05
10
= 1.0 V
B
C
= 10
20
= 25°C
20
30 50
20
50
MPSA06
1.0 s
30
100
100
1.0 ms
V
CE
50
200 300
200
100 ms
= 1.0 V
http://onsemi.com
70
500
100
500
4
−1.0 k
−700
−500
−300
−200
−100
−1.0
−0.8
−0.6
−0.4
−0.2
−70
−50
−30
−20
−10
400
200
100
80
60
40
0
−0.5
−0.5
−1.0
T
J
−1.0
−1.0
Figure 9. MPSA55/56 Active−Region Safe
= 25°C
V
Figure 11. MPSA55/56 DC Current Gain
CE(sat)
−2.0
Figure 13. MPSA55/56 “ON” Voltages
T
T
A
J
V
= 25°C
CE
= 125°C
−2.0
−2.0
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
@ I
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
−3.0
−55°C
25°C
C
V
I
I
V
/I
BE(on)
C
C
B
BE(sat)
, COLLECTOR CURRENT (mA)
−5.0
, COLLECTOR CURRENT (mA)
= 10
−5.0
−5.0
Operating Area
@ V
@ I
−7.0
−10
−10
CE
C
MPSA55
/I
PNP
B
−10
= −1.0 V
T
= 10
C
−20
−20
= 25°C
−20
−50
−50
MPSA56
1.0 s
−30
−100
−100
V
1.0 ms
−50
CE
−200
−200
= −1.0 V
100 ms
−70
−100
−500
−500