2N5551G ON Semiconductor, 2N5551G Datasheet - Page 2

• Manufacturer Part Number: 2N5551G
• Description: TRANS NPN SS GP 0.6A 160V TO-92
• Manufacturer: ON Semiconductor
• Type: Amplifierr

Specifications of 2N5551G

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 160V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 10mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 300MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 160 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 80 at 1 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: 600 mA
• Current, Gain: 30
• Frequency: 300 MHz
• Package Type: TO-92
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Voltage, Breakdown, Collector To Emitter: 160 V
• Voltage, Collector To Base: 180 V
• Voltage, Collector To Emitter: 160 V
• Voltage, Collector To Emitter, Saturation: 0.2 V
• Voltage, Emitter To Base: 6 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2N5551G; 2N5551GOS

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL−SIGNAL CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
(I
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Current−Gain — Bandwidth Product
Output Capacitance
Input Capacitance
Small−Signal Current Gain
Noise Figure
E
= 10 mAdc, I
(I
(I
(V
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
(I
(I
C
C
C
C
C
C
C
C
C
C
C
C
CB
CB
CB
CB
EB
CB
EB
= 1.0 mAdc, I
= 100 mAdc, I
= 1.0 mAdc, V
= 10 mAdc, V
= 50 mAdc, V
= 10 mAdc, I
= 50 mAdc, I
= 10 mAdc, I
= 50 mAdc, I
= 10 mAdc, V
= 1.0 mAdc, V
= 250 mAdc, V
= 100 Vdc, I
= 120 Vdc, I
= 100 Vdc, I
= 120 Vdc, I
= 4.0 Vdc, I
= 10 Vdc, I
= 0.5 Vdc, I
C
= 0)
B
B
B
B
E
B
E
C
CE
CE
CE
C
E
E
E
E
CE
CE
CE
= 1.0 mAdc)
= 5.0 mAdc)
= 1.0 mAdc)
= 5.0 mAdc)
= 0, f = 1.0 MHz)
= 0)
= 0 )
= 0)
= 0, f = 1.0 MHz)
= 0)
= 0)
= 0, T
= 0, T
= 5.0 Vdc)
= 5.0 Vdc)
= 10 Vdc, f = 100 MHz)
= 5.0 Vdc)
= 10 Vdc, f = 1.0 kHz)
= 5.0 Vdc, R
A
A
= 100°C)
= 100°C)
Characteristic
S
= 1.0 kW, f = 1.0 kHz)
(T
A
= 25°C unless otherwise noted)
2N5550, 2N5551
http://onsemi.com
2
Both Types
Both Types
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
BE(sat)
C
C
h
CBO
EBO
NF
h
f
obo
FE
ibo
T
fe
Min
140
160
160
180
100
6.0
60
80
60
80
20
30
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.15
0.25
0.20
100
100
250
250
300
200
1.0
1.2
1.0
6.0
8.0
50
50
50
30
20
10
−
−
−
−
−
−
−
−
−
nAdc
mAdc
nAdc
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
dB
pF
pF
−
−