2N5401G ON Semiconductor, 2N5401G Datasheet - Page 2

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2N5401G

Manufacturer Part Number
2N5401G
Description
TRANS SS PNP 150V 600MA TO-92
Manufacturer
ON Semiconductor
Type
Amplifierr
Datasheets

Specifications of 2N5401G

Transistor Type
PNP
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
150V
Vce Saturation (max) @ Ib, Ic
500mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 10mA, 5V
Power - Max
625mW
Frequency - Transition
300MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
150 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.6 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
625 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
50 at 1 mA at 5 V
Minimum Operating Temperature
- 55 C
Current, Collector
600 mA
Current, Gain
50
Frequency
300 MHz
Package Type
TO-92
Polarity
PNP
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
150 V
Voltage, Collector To Base
160 V
Voltage, Collector To Emitter
150 V
Voltage, Collector To Emitter, Saturation
0.5 V
Voltage, Emitter To Base
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2N5401G
2N5401GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N5401G
Manufacturer:
ONSemiconduc
Quantity:
5 630
Part Number:
2N5401G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
2N5401G
Quantity:
290
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL−SIGNAL CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Collector−Emitter Breakdown Voltage (Note 1)
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Current−Gain — Bandwidth Product
Output Capacitance
Small−Signal Current Gain
Noise Figure
2N5401G
2N5401RLRAG
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(V
(I
(I
C
C
E
C
C
C
C
C
C
C
C
C
C
CB
CB
EB
CB
= 1.0 mAdc, I
= 100 mAdc, I
= 10 mAdc, I
= 1.0 mAdc, V
= 10 mAdc, V
= 50 mAdc, V
= 10 mAdc, I
= 50 mAdc, I
= 10 mAdc, I
= 50 mAdc, I
= 10 mAdc, V
= 1.0 mAdc, V
= 250 mAdc, V
= 3.0 Vdc, I
= 120 Vdc, I
= 120 Vdc, I
= 10 Vdc, I
Device
C
B
B
B
B
E
B
E
C
CE
CE
CE
= 0)
E
E
CE
CE
CE
= 1.0 mAdc)
= 5.0 mAdc)
= 1.0 mAdc)
= 5.0 mAdc)
= 0, f = 1.0 MHz)
= 0)
= 0)
= 0)
= 0)
= 0, T
= 5.0 Vdc)
= 5.0 Vdc)
= 10 Vdc, f = 100 MHz)
= 5.0 Vdc)
= 10 Vdc, f = 1.0 kHz)
= 5.0 Vdc, R
A
Characteristic
= 100°C)
(T
S
A
= 1.0 kW, f = 1.0 kHz)
= 25°C unless otherwise noted)
2N5401
(Pb−Free)
(Pb−Free)
Package
TO−92
TO−92
2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
I
I
h
CBO
EBO
NF
h
f
obo
FE
T
fe
2000 Tape & Reel
5000 Unit / Bulk
Min
150
160
100
5.0
50
60
50
40
Shipping
Max
240
300
200
0.2
0.5
1.0
1.0
6.0
8.0
50
50
50
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
dB
pF

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