MPSA29G ON Semiconductor, MPSA29G Datasheet - Page 3

• Manufacturer Part Number: MPSA29G
• Description: TRANS NPN DARL BIPO 100V TO-92
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of MPSA29G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (max): 500nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 12 V
• Collector- Base Voltage Vcbo: 100 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 0.5 A
• Dc Collector/base Gain Hfe Min: 10000
• Minimum Operating Temperature: - 55 C
• Current, Gain: 10000
• Current, Output: 500 mA
• Package Type: TO-92
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Ambient: 200
• Voltage, Collector To Emitter, Saturation: 0.8 V
• Voltage, Input: 12 V
• Voltage, Output: 100 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MPSA29G; MPSA29GOS

--1.0
--2.0
--3.0
--4.0
--5.0
200
100
500
200
100
5.0
2.0
1.0
1 k
50
20
10
50
20
10
0
1.0
1.0
1.0
Figure 5. Active Region - - Safe Operating Area
θVB for V
θVC for V
VALID FOR DUTY CYCLE ≤ 10%
2.0
2.0
T
2.0
T
T
T
A
Figure 3. Temperature Coefficients
BE
V
A
A
A
= 25°C
CE
= 125°C
= --55°C
= 25°C
CE(S)
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
, COLLECTOR--EMITTER VOLTAGE (VOLTS)
5.0
5.0
Figure 1. DC Current Gain
I
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
10
10
5.0
20
20
V
CE
25°C to 125°C
10
25°C to 125°C
= 5.0 V
T
50
50
C
1.0 s
= 25°C
MPSA28
1.0 ms
20
100
100
MPSA29
--55°C to 25°C
200
200
--55°C to 25°C
100 ms
50
http://onsemi.com
500
500
100
1 k
3
1.8
1.6
1.4
1.2
1.0
0.8
0.6
2.4
2.0
1.6
1.2
0.8
0.4
5.0
2.0
1.0
0.5
0.2
0.1
10
1.0
0.3
0.2
T
I
0.5
C
A
2.0
= 10 mA
= 25°C
Figure 6. High Frequency Current Gain
T
V
T
f = 100 MHz
Figure 4. Collector Saturation Region
A
A
CE
= 25°C
= 25°C
1.0
= 5.0 V
1.0
5.0
Figure 2. “ON” Voltages
I
2.0
I
2.0
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
V
CE(S)
I
10
B
, BASE CURRENT (mA)
I
C
@ I
5.0
= 100 mA
20
10 20
C
/I
B
V
10
= 1.0 k
BE(S)
50
I
@ I
20
C
= 250 mA
V
C
100
BE(ON)
/I
B
100 200
= 1.0 k
50
200
@ V
I
C
CE
100
= 500 mA
= 5.0 V
500
200 300
1 k 1.5 k
1 k