Mechanical Data
Features
Maximum Ratings
Electrical Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
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•
•
•
•
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Notes:
DS30367 Rev. 9 - 2
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
High Current Gain
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
1. Device mounted on FR-4 PCB, 1.6x1.6x0.06 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001 which can be found on
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
www.diodes.com
E
V
V
V
V
Symbol
V
B
(BR)CBO
(BR)EBO
(BR)CEO
B
CE(SAT)
BE(SAT)
C
I
I
I
C
h
1 of 3
CBO
CES
EBO
f
TOP VIEW
obo
FE
ibo
T
T
Symbol
J
V
V
V
G
H
C
R
C
, T
P
CBO
CEO
EBO
I
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
θ JA
C
D
D
STG
A
E
10,000
10,000
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E
Min
125
80
12
80
⎯
⎯
⎯
⎯
⎯
8.0 Typical
J
15 Typical
B C
K
2
O
Max
L
100
500
100
1.5
2.0
3
⎯
⎯
⎯
⎯
⎯
Fire Retardants.
-55 to +150
MHz
Unit
nA
nA
nA
pF
pF
⎯
Value
V
V
V
V
V
M
500
300
417
80
80
12
I
I
I
V
V
V
I
I
I
I
V
V
V
f = 100MHz
C
E
C
C
C
C
C
CB
CE
EB
CB
EB
CE
= 100μA I
= 100μA I
= 100μA I
= 10mA, V
= 100mA, V
= 100mA, I
= 100mA, V
= 10V, I
= 60V, I
= 10V
= 10V, f = 1.0MHz, I
= 0.5V, f = 1.0MHz, I
= 5.0V, I
MMBTA28
All Dimensions in mm
Dim
Test Condition
M
A
B
C
D
E
G
H
K
J
L
α
C
C
E
B
E
C
B
= 0
= 0
= 0
= 0
= 0
CE
CE
CE
= 10mA,
= 100μA
SOT-23
= 5.0V
= 5.0V
= 5.0V
0.013
0.903
0.085
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.45
Min
© Diodes Incorporated
0°
°C/W
Unit
mW
mA
°C
E
V
V
V
C
MMBTA28
= 0
0.180
= 0
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
8°