BSR33TA Diodes Zetex, BSR33TA Datasheet

TRANSISTOR PNP 80V 1A SOT-89

BSR33TA

Manufacturer Part Number

BSR33TA

Description

TRANSISTOR PNP 80V 1A SOT-89

Manufacturer

Diodes Zetex

Datasheet

1.BSR33TA.pdf (1 pages)

Specifications of BSR33TA

Transistor Type

PNP

Current - Collector (ic) (max)

1A

Voltage - Collector Emitter Breakdown (max)

80V

Vce Saturation (max) @ Ib, Ic

500mV @ 50mA, 500mA

Dc Current Gain (hfe) (min) @ Ic, Vce

100 @ 100mA, 5V

Power - Max

1W

Frequency - Transition

100MHz

Mounting Type

Surface Mount

Package / Case

SC-62, SOT-89, TO-243 (3 Leads + Tab)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

-

Other names

BSR33TA
BSR33TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

BSR33TA

Manufacturer:

DIODES/美台

Quantity:

20 000

Current page: 1 of 1
Download datasheet (41Kb)

SOT89 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 4 – MARCH 2001

COMPLEMENTARY TYPE –

PARTMARKING DETAILS –

ABSOLUTE MAXIMUM RATINGS.

ELECTRICAL CHARACTERISTICS (at T

*Measured under pulsed conditions.

Spice parameter data is available upon request for this device

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

Operating and Storage Temperature Range

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off Current I

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

Output Capacitance

Input Capacitance

Transition Frequency

Turn-On Time

Turn-Off Time

amb

=25°C

SYMBOL

V

V

V

V

V

h

C

C

f

T

T

CBO

T

FE

on

off

(BR)CBO

(BR)CEO

(BR)EBO

CE(sat)

BE(sat)

obo

ibo

BSR43

BR4

MIN.

-90

-80

-5

30

100

50

100

amb

TBA

MAX.

-100

-50

-0.25

-0.5

-1.0

-1.2

300

20

120

500

650

SYMBOL

V

V

V

I

I

P

T

= 25°C unless otherwise stated).

CM

C

TOT

j

CBO

CEO

EBO

:T

stg

UNIT

V

V

V

nA

V

V

V

V

pF

pF

MHz

ns

ns

A

-65 to +150

CONDITIONS.

I

I

I

V

V

I

I

I

I

I

I

I

V

V

I

f =35MHz

V

I

C

C

E

C

C

C

C

C

C

C

C

B1

CB

CB

CB

EB

CC

=-100 A

=-10mA

=-10 A

=-150mA, I

=-50mA, V

VALUE

=-150mA, I

=-500mA, I

=-500mA, I

=-100 A, V

=-100mA, V

=-500mA, V

=-I

=-60V

=-60V, T

-90

-80

=-0.5V, f =1MHz

=-10V, f =1MHz

=-20V, I

-5

-2

-1

1

B2

BSR33

C

=-5mA

SOT89

amb

C

CE

B

B

B

B

B

CE

=-100mA

=-15mA*

CE

CE

=-10V

=-15mA*

=-50mA*

=-50mA*

=125°C

=-5V*

=-5V*

=-5V*

C

UNIT

°C

W

A

A

V

V

V

E

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