MJE171G ON Semiconductor, MJE171G Datasheet - Page 4
MJE171G
Manufacturer Part Number
MJE171G
Description
TRANS POWER PNP 3A 60V TO225AA
Manufacturer
ON Semiconductor
Type
Powerr
Specifications of MJE171G
Transistor Type
PNP
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
1.7V @ 600mA, 3A
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 100mA, 1V
Power - Max
12.5W
Frequency - Transition
50MHz
Mounting Type
Through Hole
Package / Case
TO-225-3
Current, Collector
3 A
Current, Gain
12
Frequency
50 MHz
Package Type
TO-225AA
Polarity
PNP
Power Dissipation
1.5 W
Primary Type
Si
Resistance, Thermal, Junction To Case
10 °C/W
Voltage, Breakdown, Collector To Emitter
60 V
Voltage, Collector To Base
60 V
Voltage, Collector To Emitter
60 V
Voltage, Collector To Emitter, Saturation
1.7 V
Voltage, Emitter To Base
7 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
MJE171GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJE171G
Manufacturer:
ON Semiconductor
Quantity:
1 700
H
Q
U
1
−B−
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
2
3
D
G
S
2 PL
0.25 (0.010)
V
−A−
K
F
M
A
M
0.25 (0.010)
B
M
M
PACKAGE DIMENSIONS
M
A
CASE 77−09
J
M
TO−225
ISSUE Z
R
C
B
6
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
Y14.5M, 1982.
077−09.
STYLE 1:
DIM
A
B
C
D
G
H
K
M
Q
R
S
U
V
F
J
PIN 1. EMITTER
2. COLLECTOR
3. BASE
0.425
0.295
0.095
0.020
0.050
0.015
0.575
0.148
0.045
0.025
0.145
0.040
0.115
MIN
0.094 BSC
5 TYP
INCHES
_
0.435
0.305
0.105
0.026
0.130
0.095
0.025
0.655
0.158
0.065
0.035
0.155
MAX
−−−
10.80
14.61
MILLIMETERS
MIN
7.50
2.42
0.51
2.93
1.27
0.39
3.76
1.15
0.64
3.69
1.02
2.39 BSC
5 TYP
_
11.04
16.63
MAX
7.74
2.66
0.66
3.30
2.41
0.63
4.01
1.65
0.88
3.93
−−−