2N4920G ON Semiconductor, 2N4920G Datasheet - Page 4

• Manufacturer Part Number: 2N4920G
• Description: TRANS PNP GP 1A 80V TO225AA
• Manufacturer: ON Semiconductor
• Type: Medium Powerr

Specifications of 2N4920G

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 100mA, 1A
• Current - Collector Cutoff (max): 500µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 500mA, 1V
• Power - Max: 30W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 3 A
• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Frequency: 3 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 1 A
• Current, Gain: 10
• Frequency: 3 MHz
• Package Type: TO-225
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 4.16 °C/W
• Voltage, Breakdown, Collector To Emitter: 80 V
• Voltage, Collector To Base: 80 V
• Voltage, Collector To Emitter: 80 V
• Voltage, Collector To Emitter, Saturation: 0.6 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N4920GOS

0.07
0.05
5.0
2.0
1.0
0.5
0.2
0.1
10
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
1.0
1.0
0.7
0.5
0.3
0.2
0.1
10
0.01
Figure 5. Active−Region Safe Operating Area
PULSE CURVES APPLY BELOW
0.1
SINGLE PULSE
D = 0.5
2.0
V
0.02 0.03 0.05
T
0.05
0.01
20
J
0.2
CE
t
s
RATED V
= 150 C
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMIT @ T
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
= t
3.0
30
s
− 1/8 t
I
Figure 6. Storage Time
C
, COLLECTOR CURRENT (mA)
CEO
5.0
50 70
f
I
C
/I
7.0
B
= 10
5.0 ms
0.1
10
100
C
dc
= 25 C
0.2 0.3
20
I
200 300
C
1.0 ms
/I
B
= 20
30
T
T
I
B1
2N4918 − 2N4920* Series
J
J
0.5
= 25 C
= 150 C
= I
50
B2
500 700 1000
Figure 4. Thermal Response
100 ms
http://onsemi.com
1.0
70
100
2.0 3.0
t, TIME (ms)
4
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
0.07
0.05
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
There are two limitations on the power handling ability of
The data of Figure 5 is based on T
q
q
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
5.0
JC
JC
J(pk)
10
(t) = r(t) q
= 4.16 C/W MAX
− T
C
10
= P
20
JC
(pk)
1
I
q
C
30
20
JC
/I
B
I
(t)
C
= 10
, COLLECTOR CURRENT (mA)
Figure 7. Fall Time
30
50 70
I
C
/I
B
50
= 20
P
100
(pk)
DUTY CYCLE, D = t
100
t
1
200 300
J(pk)
t
2
200 300
T
T
= 150_C; T
V
I
J
J
B1
CC
= 25 C
= 150 C
= I
= 30 V
1
500 700 1000
B2
/t
500
2
C
− V
J(pk)
1000
C
CE
is