2N6038G ON Semiconductor, 2N6038G Datasheet - Page 4

• Manufacturer Part Number: 2N6038G
• Description: TRANS DARL NPN 4A 60V TO225AA
• Manufacturer: ON Semiconductor
• Type: Power, Switchr

Specifications of 2N6038G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 3V @ 40mA, 4A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 750 @ 2A, 3V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Current, Gain: 100
• Current, Input: 100 mA
• Current, Output: 4 A
• Package Type: TO-225AA
• Polarity: NPN
• Power Dissipation: 40 W
• Primary Type: Si
• Resistance, Thermal, Junction To Ambient: 83.3
• Voltage, Collector To Emitter, Saturation: 3 V
• Voltage, Input: 5 V
• Voltage, Output: 60 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: 2N6038GOS

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
T
pulse limits are valid for duty cycles to 10% provided T
< 150_C. T
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
0.7
C
There are two limitations on the power handling ability of
The data of Figures 4 and 5 is based on T
1.0
7.0
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
is variable depending on conditions. Second breakdown
6.0 k
4.0 k
3.0 k
2.0 k
1.0 k
800
600
400
300
5.0
0.04
PNP
2N6034, 2N6035, 2N6036
0.06
7.0
J(pk)
V
CE
5.0 ms
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
SECOND BREAKDOWN LIMITED
T
may be calculated from the data in Figure 3.
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
J
10
= 150°C
Figure 4. 2N6035, 2N6036
C
T
= 25°C (SINGLE PULSE)
I
dc
C
C
, COLLECTOR CURRENT (AMP)
= 125°C
0.2
1.0 ms
25°C
20
0.4
2N6036
2N6035
- 55°C
ACTIVE−REGION SAFE−OPERATING AREA
30
0.6
1.0
100 ms
J(pk)
50
V
Figure 7. DC Current Gain
CE
= 150_C;
C
2.0
70
= 3.0 V
http://onsemi.com
− V
J(pk)
CE
100
4.0
4
6.0 k
4.0 k
3.0 k
2.0 k
1.0 k
800
600
400
300
200
100
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
70
50
30
20
10
0.04
0.04
5.0
NPN
2N6038, 2N6039
0.06 0.1
0.06
7.0
V
T
CE
J
0.1
5.0 ms
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T
SECOND BREAKDOWN LIMITED
T
= 125°C
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
J
0.2
10
PNP
NPN
Figure 5. 2N6038, 2N6039
= 150°C
C
I
V
C
= 25°C (SINGLE PULSE)
R
dc
, COLLECTOR CURRENT (AMP)
Figure 6. Capacitance
, REVERSE VOLTAGE (VOLTS)
0.4 0.6 1.0
0.2
- 55°C
25°C
20
0.4
C
1.0 ms
2N6039
2N6038
ib
2.0
0.6
30
4.0
T
C
1.0
6.0 10
= 25°C
100 ms
50
V
CE
2.0
= 3.0 V
C
70
ob
20
100
4.0
40