MJE13005G ON Semiconductor, MJE13005G Datasheet - Page 6

TRANS PWR NPN 4A 400V TO220AB

MJE13005G

Manufacturer Part Number
MJE13005G
Description
TRANS PWR NPN 4A 400V TO220AB
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Type
Powerr
Datasheets

Specifications of MJE13005G

Transistor Type
NPN
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
1V @ 1A, 4A
Dc Current Gain (hfe) (min) @ Ic, Vce
8 @ 2A, 5V
Power - Max
2W
Frequency - Transition
4MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
400 V
Emitter- Base Voltage Vebo
9 V
Maximum Dc Collector Current
4 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
4 A
Dc Collector/base Gain Hfe Min
10
Maximum Operating Frequency
4 MHz
Minimum Operating Temperature
- 65 C
Current, Collector
4 A
Current, Emitter
6 A
Current, Gain
40
Frequency
4 MHz
Package Type
TO-220AB
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
1.67 °C/W
Voltage, Breakdown, Collector To Emitter
400 V
Voltage, Collector To Emitter
700 V
Voltage, Collector To Emitter, Saturation
1 V
Voltage, Emitter To Base
9 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MJE13005GOS
The Safe Operating Area Figures 11 and 12 are specified ratings for these devices under the test conditions shown.
FORWARD BIAS
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 11 may be found at
any case temperature by using the appropriate curve on
Figure 13.
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
0.05
0.02
0.01
There are two limitations on the power handling ability of
The data of Figure 11 is based on T
T
0.5
0.2
0.1
10
J(pk)
5
2
1
5
Figure 11. Forward Bias Safe Operating Area
may be calculated from the data in Figure 10. At
7
10
V
CE
C
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
≥ 25_C. Second breakdown limitations do
20
30
dc
50 70 100
5 ms
0.8
0.6
0.4
0.2
1
0
20
SAFE OPERATING AREA INFORMATION
C
= 25_C; T
Figure 13. Forward Bias Power Derating
40
500 ms
200
MJE13005
DERATING
THERMAL
1 ms
C
300
J(pk)
60
http://onsemi.com
T
− V
C
400
, CASE TEMPERATURE (°C)
500
CE
is
80
6
Figure 12. Reverse Bias Switching Safe Operating Area
REVERSE BIAS
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 12 gives the complete RBSOA
characteristics.
SECOND BREAKDOWN
3
2
1
0
100
4
For inductive loads, high voltage and high current must be
0
DERATING
V
CE
100
120
, COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS)
200
140
MJE13005
300
160
400
500
V
T
I
600
BE(off)
B1
C
≤ 100°C
= 2.0 A
= 9 V
700
3 V
1.5 V
5 V
800

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