2N6043G ON Semiconductor, 2N6043G Datasheet - Page 4

• Manufacturer Part Number: 2N6043G
• Description: TRANS DARL NPN 8A 60V TO220AB
• Manufacturer: ON Semiconductor
• Type: Medium Power, Switchr

Specifications of 2N6043G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 2V @ 16mA, 4A
• Current - Collector Cutoff (max): 20µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 4A, 4V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 60 V
• Maximum Dc Collector Current: 8 A
• Maximum Collector Cut-off Current: 20 uA
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 8 A
• Dc Collector/base Gain Hfe Min: 100, 1000
• Minimum Operating Temperature: - 65 C
• Current, Gain: 100
• Current, Input: 120 mA
• Current, Output: 8 A
• Package Type: TO-220AB
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Ambient: 57
• Voltage, Collector To Emitter, Saturation: 4 V
• Voltage, Input: 2.8 V
• Voltage, Output: 100 V
• Collector Emitter Voltage V(br)ceo: 60V
• Power Dissipation Pd: 75W
• Dc Collector Current: 8A
• Dc Current Gain Hfe: 20
• Operating Temperature Range: -65°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2N6043GOS

0.05
0.02
10,000
20,000
10,000
5.0
2.0
1.0
0.5
0.2
0.1
5000
3000
2000
1000
20
10
7000
5000
3000
2000
1000
500
300
200
100
700
500
300
200
1.0
50
30
20
10
1.0
0.1
Figure 5. Active-Region Safe Operating Area
CURVES APPLY BELOW RATED V
PNP
2N6040, 2N6042
T
J
= 150°C
2.0
2.0
- 55°C
V
Figure 6. Small-Signal Current Gain
CE
0.2 0.3
25°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
T
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
J
3.0
= 150°C
PNP
NPN
5.0
T
V
I
C
I
C
CE
C
= 3.0 Adc
, COLLECTOR CURRENT (AMP)
5.0
= 25°C
= 4.0 Vdc
10
0.5
f, FREQUENCY (kHz)
500 ms
7.0
1.0 ms
0.7
20
5.0 ms
PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045
10
1.0
CEO
2N6040, 2N6043
C
50
= 25°C
20
2.0
100
dc
2N6045
30
3.0
200
V
CE
50
= 4.0 V
Figure 8. DC Current Gain
5.0
100 ms
http://onsemi.com
70
500
7.0
100
1000
10
4
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
< 150°C. T
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
20,000
10,000
300
200
100
7000
5000
3000
2000
1000
70
50
30
There are two limitations on the power handling ability of
The data of Figure 5 is based on T
700
500
300
200
0.1
0.1
NPN
2N6043, 2N6045
T
J
0.2
= 150°C
- 55°C
J(pk)
0.2 0.3
25°C
PNP
NPN
0.5
may be calculated from the data in Figure 4.
V
R
I
Figure 7. Capacitance
C
, REVERSE VOLTAGE (VOLTS)
, COLLECTOR CURRENT (AMP)
1.0
0.5
C
2.0
ib
0.7
1.0
5.0
C
ob
J(pk)
10
2.0
3.0
= 150°C; T
20
T
J
V
= 25°C
CE
5.0
= 4.0 V
C
50
7.0
- V
J(pk)
C
100
10
CE
is