2N3773G ON Semiconductor, 2N3773G Datasheet - Page 4

TRANS NPN 16A 140V TO3

2N3773G

Manufacturer Part Number
2N3773G
Description
TRANS NPN 16A 140V TO3
Manufacturer
ON Semiconductor
Type
Powerr
Datasheets

Specifications of 2N3773G

Transistor Type
NPN
Current - Collector (ic) (max)
16A
Voltage - Collector Emitter Breakdown (max)
140V
Vce Saturation (max) @ Ib, Ic
1.4V @ 800mA, 8A
Current - Collector Cutoff (max)
10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
15 @ 8A, 4V
Power - Max
150W
Mounting Type
Chassis Mount
Package / Case
TO-204, TO-3
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
140 V
Emitter- Base Voltage Vebo
7 V
Maximum Dc Collector Current
16 A
Power Dissipation
150 W
Continuous Collector Current
16 A
Dc Collector/base Gain Hfe Min
15
Current, Collector
16 A
Current, Gain
5
Package Type
TO-204
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
1.17 °C/W
Voltage, Breakdown, Collector To Emitter
140 V
Voltage, Collector To Base
160 V
Voltage, Collector To Emitter
140 V
Voltage, Collector To Emitter, Saturation
4 V
Voltage, Emitter To Base
7 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2N3773GOS

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Company
Part Number
Manufacturer
Quantity
Price
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2N3773G
Manufacturer:
ON Semiconductor
Quantity:
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ONSEMICON
Quantity:
736
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a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation: i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
There are two limitations on the power handling ability of
0.05
0.03
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
30
20
10
100
80
60
40
20
3.0
0
0
Figure 7. Forward Bias Safe Operating Area
5.0 7.0
V
NPN 2N3773*, PNP 2N6609
CE
BONDING WIRE LIMIT
THERMAL LIMIT
@ T
SECOND BREAKDOWN LIMIT
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
40
10
C
C
Figure 8. Power Derating
= 25 C, SINGLE PULSE
T
http://onsemi.com
− V
C
, CASE TEMPERATURE ( C)
DERATING
20
THERMAL
CE
80
dc
30
4
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
< 200_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
50
The data of Figure 7 is based on T
120
70
100
160
1.0 ms
10 ms
40 ms
100 ms
200 ms
100 ms
500 ms
200
300
200
J(pk)
= 200_C; T
J(pk)
C
is

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