MJ4502G ON Semiconductor, MJ4502G Datasheet
MJ4502G
Manufacturer Part Number
MJ4502G
Description
TRANS PWR PNP 30A 100V TO3
Manufacturer
ON Semiconductor
Type
High Powerr
Specifications of MJ4502G
Transistor Type
PNP
Current - Collector (ic) (max)
30A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
800mV @ 750mA, 7.5A
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 7.5A, 2V
Power - Max
200W
Frequency - Transition
2MHz
Mounting Type
Chassis Mount
Package / Case
TO-204, TO-3
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
90 V
Emitter- Base Voltage Vebo
4 V
Maximum Dc Collector Current
30 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 200 C
Continuous Collector Current
30 A
Dc Collector/base Gain Hfe Min
25
Maximum Operating Frequency
2 MHz
Minimum Operating Temperature
- 65 C
Current, Collector
30 A
Current, Gain
100
Frequency
2 MHz
Package Type
TO-204AA (TO-3)
Polarity
PNP
Primary Type
Si
Resistance, Thermal, Junction To Case
0.875 °C/W
Voltage, Breakdown, Collector To Emitter
100 V
Voltage, Collector To Base
100 V
Voltage, Collector To Emitter
100 V
Voltage, Collector To Emitter, Saturation
0.8 V
Voltage, Emitter To Base
90 V
Number Of Elements
1
Collector-emitter Voltage
90V
Collector-base Voltage
100V
Emitter-base Voltage
4V
Collector Current (dc) (max)
30A
Dc Current Gain (min)
25
Frequency (max)
2MHz
Operating Temp Range
-65C to 200C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
2 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MJ4502GOS
MJ4502
High−Power NPN Silicon
Transistor
amplifiers to 100−Watts music power per channel.
Features
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Case
This transistor is for use as an output device in complementary audio
High DC Current Gain − h
Excellent Safe Operating Area
Complement to the NPN MJ802
Pb−Free Package is Available*
Derate above 25_C
Characteristics
Rating
C
= 25_C
FE
= 25 −100 @ I
Symbol
Symbol
T
V
V
J
V
V
q
P
, T
CER
CEO
I
I
CB
JC
EB
C
B
D
stg
C
= 7.5 A
−65 to +200
Value
0.875
1.14
Max
100
100
200
4.0
7.5
90
30
1
W/_C
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
_C
W
MJ4502
MJ4502G
Device
100 VOLTS − 200 WATTS
POWER TRANSISTOR
ORDERING INFORMATION
MJ4502 = Device Code
G
A
Y
WW
MEX
MARKING DIAGRAM
PNP SILICON
30 AMPERE
TO−204AA (TO−3)
(Pb−Free)
Package
TO−204
TO−204
= Pb−Free Package
= Assembly Location
= Year
= Work Week
= Country of Origin
CASE 1−07
MJ4502G
STYLE 1
AYWW
MEX
100 Units / Tray
100 Units / Tray
Shipping
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MJ4502G Summary of contents
Page 1
... VOLTS − 200 WATTS TO−204AA (TO−3) CASE 1−07 STYLE 1 MARKING DIAGRAM MJ4502G AYWW MEX MJ4502 = Device Code G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week MEX = Country of Origin ORDERING INFORMATION Device Package Shipping MJ4502 TO−204 100 Units / Tray MJ4502G TO−204 100 Units / Tray (Pb−Free) ...
Page 2
ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...
Page 3
PACKAGE DIMENSIONS SEATING −T− PLANE 0.13 (0.005 −Y− −Q− 0.13 (0.005 MJ4502 TO−204 (TO−3) CASE 1−07 ...