2N6287G ON Semiconductor, 2N6287G Datasheet

2N6287G

Manufacturer Part Number

2N6287G

Description

TRANS DARL PNP 20A 100V TO-3

Manufacturer

ON Semiconductor

Type

Power, Switchr

Datasheets

1.2N6287G.pdf (7 pages)

2.2N6284G.pdf (3 pages)

Specifications of 2N6287G

Transistor Type

PNP - Darlington

Current - Collector (ic) (max)

20A

Voltage - Collector Emitter Breakdown (max)

100V

Vce Saturation (max) @ Ib, Ic

3V @ 200mA, 20A

Current - Collector Cutoff (max)

1mA

Dc Current Gain (hfe) (min) @ Ic, Vce

750 @ 10A, 3V

Power - Max

160W

Mounting Type

Chassis Mount

Package / Case

TO-204, TO-3

Configuration

Single

Transistor Polarity

PNP

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

100 V

Emitter- Base Voltage Vebo

5 V

Collector- Base Voltage Vcbo

100 V

Maximum Dc Collector Current

20 A

Maximum Collector Cut-off Current

500 uA

Power Dissipation

160 W

Maximum Operating Temperature

+ 200 C

Continuous Collector Current

20 A

Dc Collector/base Gain Hfe Min

100, 750

Minimum Operating Temperature

- 65 C

Current, Gain

100

Current, Input

0.5 A

Current, Output

20 A

Package Type

TO-204AA (TO-3)

Polarity

PNP

Primary Type

Voltage, Collector To Emitter, Saturation

3 V

Voltage, Input

5 V

Voltage, Output

100 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Frequency - Transition

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

2N6287G
2N6287GOS

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Download datasheet (107Kb)

2N6284 (NPN); 2N6286,

2N6287 (PNP)

Darlington Complementary

Silicon Power Transistors

low−frequency switching applications.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data.

*For additional information on our Pb−Free strategy and soldering details, please

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current − Continuous

Base Current

Total Power Dissipation @ T

Derate above 25°C

Operating and Storage Temperature

Range

Thermal Resistance, Junction−to−Case

These packages are designed for general−purpose amplifier and

High DC Current Gain @ I

Collector−Emitter Sustaining Voltage −

Monolithic Construction with Built−In Base−Emitter Shunt Resistors

Pb−Free Packages are Available*

Characteristic

CEO(sus)

Rating

= 2400 (Typ) − 2N6284

Peak

= 4000 (Typ) − 2N6287

= 100 Vdc (Min)

(Note 1)

2N6286

2N6284/87

2N6286

2N6284/87

Preferred Device

= 25°C

= 10 Adc −

(Note 1)

Symbol

CEO

, T

qJC

stg

−65 to + 200

Value

0.915

Max

1.09

100

160

5.0

0.5

°C/W

W/°C

Unit

Vdc

Adc

°C

2N6284

2N6284G

2N6286

2N6286G

2N6287

2N6287G

COMPLEMENTARY SILICON

Device

TO−204AA (TO−3)

POWER TRANSISTORS

100 VOLTS, 160 WATTS

CASE 1−07

2N628x

MEX

ORDERING INFORMATION

STYLE 1

BASE

20 AMPERE

(Pb−Free)

Package

= Device Code

= Pb−Free Package

= Location Code

= Year

= Work Week

= Country of Orgin

TO−3

COLLECTOR

CASE

EMITTER 2

x = 4, 6 or 7

MARKING DIAGRAM

2N628xG

AYYWW

100 Units/Tray

MEX

Shipping

Related parts for 2N6287G

2N6287G Summary of contents

Page 1

... Pb−Free Package A = Location Code YY = Year WW = Work Week MEX = Country of Orgin ORDERING INFORMATION Device Package Shipping 2N6284 TO−3 100 Units/Tray 2N6284G TO−3 100 Units/Tray (Pb−Free) 2N6286 TO−3 100 Units/Tray 2N6286G TO−3 100 Units/Tray (Pb−Free) 2N6287 TO−3 100 Units/Tray 2N6287G TO−3 100 Units/Tray (Pb−Free) ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

PACKAGE DIMENSIONS −T− SEATING PLANE 0.13 (0.005 −Y− −Q− 0.13 (0.005 TO−204 (TO−3) CASE 1−07 ISSUE ...

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