MJW21193G ON Semiconductor, MJW21193G Datasheet - Page 5

TRANS BIPO PNP 16A 250V TO247

MJW21193G

Manufacturer Part Number
MJW21193G
Description
TRANS BIPO PNP 16A 250V TO247
Manufacturer
ON Semiconductor
Datasheet

Specifications of MJW21193G

Transistor Type
PNP
Current - Collector (ic) (max)
16A
Voltage - Collector Emitter Breakdown (max)
250V
Vce Saturation (max) @ Ib, Ic
4V @ 3.2A, 16A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 8A, 5V
Power - Max
200W
Frequency - Transition
4MHz
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
250 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
16 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
16 A
Dc Collector/base Gain Hfe Min
20
Maximum Operating Frequency
4 MHz
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MJW21193GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJW21193G
Manufacturer:
ON Semiconductor
Quantity:
175
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
10000
There are two limitations on the power handling ability of
1000
100
0.1
T
f
Figure 15. MJW21193 Typical Capacitance
(test)
C
= 25°C
= 1 MHz)
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
Figure 17. Typical Total Harmonic Distortion
C
10
ib
C
ob
100
C
http://onsemi.com
− V
CE
FREQUENCY (Hz)
100
5
1000
10000
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
1000
100
The data of Figure 13 is based on T
0.1
T
Figure 16. MJW21194 Typical Capacitance
C
f
10000
(test)
= 25°C
= 1 MHz)
V
R
, REVERSE VOLTAGE (VOLTS)
100000
1.0
C
10
J(pk)
ib
C
ob
= 150°C; T
100
C
is

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