MJ15022G ON Semiconductor, MJ15022G Datasheet - Page 3
MJ15022G
Manufacturer Part Number
MJ15022G
Description
TRANS PWR NPN 16A 200V TO3
Manufacturer
ON Semiconductor
Type
Powerr
Specifications of MJ15022G
Transistor Type
NPN
Current - Collector (ic) (max)
16A
Voltage - Collector Emitter Breakdown (max)
200V
Vce Saturation (max) @ Ib, Ic
4V @ 3.2A, 16A
Current - Collector Cutoff (max)
500µA
Dc Current Gain (hfe) (min) @ Ic, Vce
15 @ 8A, 4V
Power - Max
250W
Frequency - Transition
4MHz
Mounting Type
Chassis Mount
Package / Case
TO-204, TO-3
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
200 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
16 A
Power Dissipation
250 W
Maximum Operating Temperature
+ 200 C
Continuous Collector Current
16 A
Dc Collector/base Gain Hfe Min
15
Maximum Operating Frequency
4 MHz
Minimum Operating Temperature
- 65 C
Current, Collector
16 A
Current, Gain
5
Frequency
4 MHz
Package Type
TO-204AA (TO-3)
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
0.7 °C/W
Voltage, Breakdown, Collector To Emitter
200 V
Voltage, Collector To Base
350 V
Voltage, Collector To Emitter
200 V
Voltage, Collector To Emitter, Saturation
4 V
Voltage, Emitter To Base
5 V
Number Of Elements
1
Collector-emitter Voltage
200V
Collector-base Voltage
350V
Emitter-base Voltage
5V
Collector Current (dc) (max)
16A
Dc Current Gain (min)
15
Frequency (max)
4MHz
Operating Temp Range
-65C to 200C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
2 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MJ15022GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJ15022G
Manufacturer:
ST
Quantity:
2 000
4000
3000
1000
500
100
200
100
5.0
1.0
40
50
20
10
0.2
0.3
0.5
1
0.5
Figure 4. DC Current Gain
I
V
C
Figure 2. Capacitances
, COLLECTOR CURRENT (AMPS)
R
, REVERSE VOLTAGE (VOLTS)
1.0
5.0
T
T
C
J
J
ib
= 25°C
= 100°C
2.0
10
1.8
1.4
1.0
0.6
0.2
C
0
ob
0.03
30
5.0
NPN − MJ15022, MJ15024*
Figure 6. Collector Saturation Region
50
TYPICAL CHARACTERISTICS
V
0.1
CE
I
C
T
= 4 A
= 4 V
100
J
10
= 25°C
http://onsemi.com
0.2
I
B
, BASE CURRENT (AMPS)
300
20
0.5
8 A
3
1.0
1.8
1.4
1.0
0.8
0.2
9
8
7
6
5
4
3
2
1
0
0
0.15
0.1
2.0
Figure 3. Current−Gain — Bandwidth Product
T
16 A
J
= 25°C
100°C
5.0
25°C
0.3
0.5
T
I
I
C
C
J
10
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
= 25°C
Figure 5. “On” Voltage
V
V
BE(on)
CE(sat)
0.5
1.0
30
@ V
@ I
CE
C
1.0
2.0
/I
B
= 4 V
= 10
100°C
2.0
5.0
T
V
f
Test
J
CE
= 25°C
= 10 V
= 1 MHz
5.0
10
10
20