MJ21193G ON Semiconductor, MJ21193G Datasheet - Page 4

• Manufacturer Part Number: MJ21193G
• Description: TRANS PWR PNP 16A 250V TO3
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of MJ21193G

• Transistor Type: PNP
• Current - Collector (ic) (max): 16A
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce Saturation (max) @ Ib, Ic: 4V @ 3.2A, 16A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 8A, 5V
• Power - Max: 250W
• Frequency - Transition: 4MHz
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 250 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 16 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 200 C
• Continuous Collector Current: 16 A
• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Frequency: 4 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 16 A
• Current, Gain: 8
• Frequency: 4 MHz
• Package Type: TO-204AA (TO-3)
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 0.7 °C/W
• Voltage, Breakdown, Collector To Emitter: 250 V
• Voltage, Collector To Base: 400 V
• Voltage, Collector To Emitter: 250 V
• Voltage, Collector To Emitter, Saturation: 4 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJ21193GOS

3.0
2.5
2.0
1.5
1.0
0.5
1.0
0.1
100
10
1.0
0.1
10
0
0.1
0.1
1.0
Figure 13. Active Region Safe Operating Area
V
Figure 11. Typical Base−Emitter Voltage
CE
Figure 9. Typical Saturation Voltages
T
T
I
C
J
= 20 V (SOLID)
J
/I
V
= 25°C
= 25°C
B
CE
T
= 10
C
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
= 25°C
I
I
C
C
V
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
BE(sat)
10
1.0
PNP MJ21193
PNP MJ21193
V
CE(sat)
10
V
1 SEC
CE
100
10
= 5 V (DASHED)
TYPICAL CHARACTERISTICS
http://onsemi.com
100
100
1000
4
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I
its of the transistor that must be observed for reliable opera-
tion; i.e., the transistor must not be subjected to greater dissip-
ation than the curves indicate.
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
down.
There are two limitations on the power handling ability of
The data of Figure 13 is based on T
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.1
10
0
0.1
0.1
T
T
Figure 12. Typical Base−Emitter Voltage
I
C
J
J
Figure 10. Typical Saturation Voltages
/I
= 25°C
= 25°C
B
= 10
1.0
I
I
V
C
C
, COLLECTOR CURRENT (AMPS)
CE
, COLLECTOR CURRENT (AMPS)
= 20 V (SOLID)
1.0
NPN MJ21194
NPN MJ21194
V
BE(sat)
V
CE(sat)
10
J(pk)
V
CE
= 200°C; T
10
= 5 V (DASHED)
C
− V
C
CE
is vari-
lim-
100
100