MJL21193G ON Semiconductor, MJL21193G Datasheet - Page 2

• Manufacturer Part Number: MJL21193G
• Description: TRANS PWR PNP 16A 250V TO264
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of MJL21193G

• Transistor Type: PNP
• Current - Collector (ic) (max): 16A
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce Saturation (max) @ Ib, Ic: 4V @ 3.2A, 16A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 8A, 5V
• Power - Max: 200W
• Frequency - Transition: 4MHz
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-3BPL
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 250V
• Collector-base Voltage(max): 400V
• Emitter-base Voltage (max): 5V
• Collector Current (dc) (max): 16A
• Dc Current Gain (min): 25
• Power Dissipation: 200W
• Frequency (max): 4MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-264
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 250 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 16 A
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 16 A
• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Frequency: 4 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 16 A
• Current, Gain: 8
• Frequency: 4 MHz
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 0.7 °C/W
• Voltage, Breakdown, Collector To Emitter: 250 V
• Voltage, Collector To Base: 400 V
• Voltage, Collector To Emitter: 250 V
• Voltage, Collector To Emitter, Saturation: 4 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJL21193GOS

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
SECOND BREAKDOWN
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Cutoff Current
Second Breakdown Collector Current with Base Forward Biased
DC Current Gain
Base−Emitter On Voltage
Collector−Emitter Saturation Voltage
Total Harmonic Distortion at the Output
Current Gain Bandwidth Product
Output Capacitance
(I
(V
(V
(V
(V
(V
(I
(I
(I
(I
(I
V
(Matched pair h
(I
(V
Figure 1. Typical Current Gain Bandwidth Product
6.5
6.0
5.5
3.5
5.0
4.5
4.0
3.0
C
C
C
C
C
C
C
RMS
CE
CE
CE
CE
CE
CB
0.1
= 100 mAdc, I
= 8 Adc, V
= 16 Adc, I
= 8 Adc, V
= 8 Adc, I
= 16 Adc, I
= 1 Adc, V
= 200 Vdc, I
= 5 Vdc, I
= 250 Vdc, V
= 50 Vdc, t = 1 s (non−repetitive)
= 80 Vdc, t = 1 s (non−repetitive)
= 10 Vdc, I
= 28.3 V, f = 1 kHz, P
T
f
V
test
J
5 V
CE
= 25°C
= 1 MHz
= 10 V
B
CE
CE
CE
B
B
= 0.8 Adc)
C
FE
= 5 Adc)
= 3.2 Adc)
E
= 0)
= 5 Vdc)
= 5 Vdc)
= 10 Vdc, f
B
B
= 0, f
I
BE(off)
= 50 @ 5 A/5 V)
C
= 0)
= 0)
COLLECTOR CURRENT (AMPS)
test
PNP MJL21193
= 1.5 Vdc)
= 1 MHz)
LOAD
test
Characteristic
1.0
= 1 MHz)
= 100 W
(T
C
RMS
= 25°C unless otherwise noted)
h
unmatched
h
matched
FE
FE
http://onsemi.com
10
2
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
Figure 2. Typical Current Gain Bandwidth Product
0.1
T
f
test
V
J
Symbol
V
V
CEO(sus)
= 25°C
CE(sat)
I
I
= 1 MHz
I
BE(on)
T
h
C
CEO
EBO
CEX
I
S/b
f
FE
HD
T
ob
I
C
COLLECTOR CURRENT (AMPS)
NPN MJL21194
Min
250
4.0
2.25
25
−
−
−
8
−
−
−
−
−
4
−
1.0
0.08
Typ
0.8
−
−
−
−
−
−
−
−
−
−
−
−
−
V
CE
Max
= 5 V
100
100
100
500
2.2
1.4
75
−
−
−
−
4
−
−
−
10 V
mAdc
mAdc
mAdc
Unit
MHz
Vdc
Adc
Vdc
Vdc
pF
%
10