MJ11032G ON Semiconductor, MJ11032G Datasheet - Page 2
MJ11032G
Manufacturer Part Number
MJ11032G
Description
TRANS DARL NPN 50A 120V TO3
Manufacturer
ON Semiconductor
Type
High Current, Powerr
Specifications of MJ11032G
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
50A
Voltage - Collector Emitter Breakdown (max)
120V
Vce Saturation (max) @ Ib, Ic
3.5V @ 500mA, 50A
Current - Collector Cutoff (max)
2mA
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 25A, 5V
Power - Max
300W
Mounting Type
Chassis Mount
Package / Case
TO-204, TO-3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
120 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
120 V
Maximum Dc Collector Current
50 A
Power Dissipation
0.3 W
Maximum Operating Temperature
+ 200 C
Continuous Collector Current
50 A
Dc Collector/base Gain Hfe Min
1000
Minimum Operating Temperature
- 55 C
Current, Gain
400
Current, Input
2 A
Current, Output
50 A
Current, Output, Leakage
2
Package Type
TO-204 (TO-3)
Polarity
NPN
Primary Type
Si
Voltage, Collector To Emitter, Saturation
3.5 V
Voltage, Input
5 V
Voltage, Output
120 V
Dc
08+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MJ11032GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJ11032G
Manufacturer:
ON/安森美
Quantity:
20 000
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
Collector−Emitter Breakdown Voltage (Note 1)
Collector−Emitter Leakage Current
Emitter Cutoff Current
Collector−Emitter Leakage Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
(I
(V
(V
(V
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
C
C
C
C
C
C
C
CE
CE
CE
CE
CE
BE
CE
= 1 00 mAdc, I
= 25 Adc, V
= 50 Adc, V
= 25 Adc, I
= 50 Adc, I
= 25 Adc, I
= 50 Adc, I
= 5 Vdc, I
= 60 Vdc, R
= 90 Vdc, R
= 120 Vdc, R
= 60 Vdc, R
= 120 Vdc, R
= 50 Vdc, I
BASE
B
B
B
B
MJ11029
MJ11033
C
CE
CE
= 250 mAdc)
= 500 mAdc)
= 200 mAdc)
= 300 mAdc)
B
PNP
= 0)
BE
BE
BE
B
= 0)
= 5 Vdc)
= 5 Vdc)
BE
BE
= 0)
= 1 kW)
= 1 kW)
= 1 kW, T
= 1 kW)
= 1 kW, T
≈ 3.0 k
C
Characteristic
C
= 150_C)
= 150_C)
(T
C
Figure 1. Darlington Circuit Schematic
= 25_C unless otherwise noted)
≈ 25
COLLECTOR
EMITTER
2
BASE
MJ11028
MJ11030
MJ11032
MJ11028, MJ11029
MJ11032, MJ11033
MJ11028, MJ11029
MJ11032, MJ11033
MJ11028, MJ11029
MJ11032, MJ11033
NPN
MJ11030
MJ11030
≈ 3.0 k
≈ 25
V
COLLECTOR
Symbol
V
V
(BR)CEO
I
CE(sat)
BE(sat)
EMITTER
I
I
h
CER
EBO
CEO
FE
Min
120
400
1 k
60
90
−
−
−
−
−
−
−
−
−
−
−
Max
18 k
2.5
3.5
3.0
4.5
10
10
−
−
−
2
2
2
5
2
−
mAdc
mAdc
mAdc
Unit
Vdc
Vdc
Vdc
−