MJ14002G ON Semiconductor, MJ14002G Datasheet
MJ14002G
Manufacturer Part Number
MJ14002G
Description
TRANS PWR NPN 60A 80V TO3
Manufacturer
ON Semiconductor
Type
High Current, Powerr
Specifications of MJ14002G
Transistor Type
NPN
Current - Collector (ic) (max)
60A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
3V @ 12A, 60A
Current - Collector Cutoff (max)
1mA
Dc Current Gain (hfe) (min) @ Ic, Vce
15 @ 50A, 3V
Power - Max
300W
Mounting Type
Chassis Mount
Package / Case
TO-204, TO-3
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
60 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 200 C
Continuous Collector Current
60 A
Dc Collector/base Gain Hfe Min
30
Minimum Operating Temperature
- 65 C
Current, Collector
60 A
Current, Gain
5
Package Type
TO-204 (TO-3)
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
0.584 °C/W
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Collector To Base
80 V
Voltage, Collector To Emitter
80 V
Voltage, Collector To Emitter, Saturation
3 V
Voltage, Emitter To Base
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MJ14002GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJ14002G
Manufacturer:
ST
Quantity:
1 929
Part Number:
MJ14002G
Manufacturer:
ON/安森美
Quantity:
20 000
MJ14001 (PNP),
MJ14002* (NPN),
MJ14003* (PNP)
High−Current Complementary
Silicon Power Transistors
applications.
Features
•
•
•
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 6
MAXIMUM RATINGS
Techniques Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Base Current − Continuous
Emitter Current − Continuous
Total Power Dissipation @ T
Derate Above 25°C
Operating and Storage Junction
Temperature Range
Collector Current − Continuous
Designed for use in high−power amplifier and switching circuit
@ I
High Current Capability − I
DC Current Gain − h
Low Collector−Emitter Saturation Voltage −V
Pb−Free Packages are Available*
C
360
330
270
210
150
= 50 Adc
90
30
0
0
Rating
40
(T
FE
Figure 1. Power Derating
J
T
C
= 25°C unless otherwise noted)
*Preferred Devices
= 15−100 @ I
C
, CASE TEMPERATURE (°C)
80
MJ14002/03
MJ14002/03
= 25°C
C
MJ14001
MJ14001
Continuous = 60 Amperes
120
C
Symbol
T
V
V
V
J
= 50 Adc
P
CEO
CBO
EBO
, T
I
I
I
C
B
E
160
D
stg
CE(sat)
−65 to +200
200
Value
1.71
300
5.0
60
80
60
80
60
15
75
= 2.5 Vdc (Max)
1
240
W/°C
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
°C
W
Preferred devices are recommended choices for future use
and best overall value.
MJ14001
MJ14001G
MJ14002
MJ14002G
MJ14003
MJ14003G
COMPLEMENTARY SILICON
60−80 VOLTS, 300 WATTS
Device
POWER TRANSISTORS
MJ1400x = Device Code
G
A
YY
WW
MEX
ORDERING INFORMATION
http://onsemi.com
60 AMPERE
TO−204 (TO−3)
CASE 197A
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
= Pb−Free Package
= Location Code
= Year
= Work Week
= Country of Orgin
STYLE 1
TO−3
TO−3
TO−3
TO−3
TO−3
TO−3
xx = 1, 2, or 3
Publication Order Number:
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
MARKING
DIAGRAM
MJ1400xG
Shipping
AYYWW
MEX
MJ14001/D
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MJ14002G Summary of contents
Page 1
... W D 1.71 W/°C ° −65 to +200 J stg MJ14001 MJ14001G MJ14002 MJ14002G MJ14003 MJ14003G 160 200 240 Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com 60 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60−80 VOLTS, 300 WATTS MARKING ...
Page 2
MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î THERMAL ...
Page 3
MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) TYPICAL ELECTRICAL CHARACTERISTICS MJ14002 (NPN) 300 200 100 3 −55° 25° 150° 7.0 5.0 3.0 0.7 ...
Page 4
MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) 1.0 0.7 0 0.3 0 0.1 0.07 0.05 0.03 MJ14002 (NPN) 0.02 MJ14001, MJ14003 (PNP) 0.01 0.7 1.0 2.0 3.0 5.0 7 COLLECTOR CURRENT (AMPS) C Figure ...
Page 5
... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...