2SC3063 Panasonic - SSG, 2SC3063 Datasheet
2SC3063
Manufacturer Part Number
2SC3063
Description
TRANS NPN 300VCEO .1A TO-126
Manufacturer
Panasonic - SSG
Datasheet
1.2SC3063.pdf
(3 pages)
Specifications of 2SC3063
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
1.5V @ 3mA, 30mA
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 5mA, 50V
Power - Max
1.2W
Frequency - Transition
140MHz
Mounting Type
Through Hole
Package / Case
TO-126-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SC3063
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Power Transistors
2SC3063
Silicon NPN triple diffusion planar type
For TV video output amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
• High collector-emitter voltage (Base open) V
• Small collector output capacitance (Common base, input open
• TO-126B package which requires no insulation plate for installa-
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
circuited) C
tion to the heat sink
Parameter
Parameter
ob
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
I
P
CBO
I
T
V
V
V
CEO
EBO
a
CP
stg
V
C
CE(sat)
C
C
h
j
f
CBO
CEO
EBO
= 25°C
FE
BE
T
ob
−55 to +150
CEO
Rating
I
I
I
V
V
I
V
V
C
C
E
C
300
300
100
200
150
CE
CE
CB
CB
1.2
= 10 µA, I
= 0.1 mA, I
= 10 µA, I
= 30 mA, I
7
SJD00103BED
= 10 V, I
= 50 V, I
= 30 V, I
= 30 V, I
C
E
Conditions
Unit
B
E
C
C
E
mA
mA
B
°C
°C
W
= 0
= 0
V
V
V
= −20 mA, f = 200 MHz
= 5 mA
= 3 mA
= 30 mA
= 0, f = 1 MHz
= 0
φ 3.16
±0.1
0.75
±0.1
1
8.0
4.6
Min
300
300
50
70
7
+0.5
–0.1
±0.2
2
3
2.3
0.5
Typ
140
±0.2
2.4
±0.1
TO-126B-A1 Package
0.5
Max
250
1.2
1.5
±0.1
1: Emitter
2: Collector
3: Base
Unit: mm
3.2
1.76
MHz
Unit
pF
V
V
V
V
V
±0.2
±0.1
1
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2SC3063 Summary of contents
Page 1
... Power Transistors 2SC3063 Silicon NPN triple diffusion planar type For TV video output amplification ■ Features • High collector-emitter voltage (Base open) V • Small collector output capacitance (Common base, input open circuited • TO-126B package which requires no insulation plate for installa- tion to the heat sink ■ ...
Page 2
... 1.6 Without heat sink 1.2 0.8 0 120 160 Ambient temperature T (°C) a CE(sat = =100˚C C 0.1 25˚C –25˚C 0. 100 Collector current I (mA) C f=1MHz T =25˚ 100 1 000 Collector-base voltage V ( 120 T =25˚ =2.0mA B 1.6mA 100 1.2mA 1 ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...