BC857BLT1G ON Semiconductor, BC857BLT1G Datasheet - Page 2

• Manufacturer Part Number: BC857BLT1G
• Description: TRANS PNP LP 100MA 45V SOT23
• Manufacturer: ON Semiconductor

Specifications of BC857BLT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 225mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 45 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: - 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 220 at 2 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 220
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC857BLT1GOSTR

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current (V
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Base −Emitter On Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Noise Figure
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
CB
= −1.0 mA)
= −0.2 mA, V
= −10 mA)
= −10 mA, V
= −10 mA)
= −10 mA, V
= −2.0 mA, V
= −10 mA, I
= −100 mA, I
= −10 mA, I
= −100 mA, I
= −2.0 mA, V
= −10 mA, V
= −10 mA, V
= −10 V, f = 1.0 MHz)
B
B
EB
CE
CE
CE
CE
B
B
CE
CE
= −0.5 mA)
= −0.5 mA)
= −5.0 mA)
= −5.0 mA)
= 0)
= −5.0 V)
= −5.0 V)
= −5.0 Vdc, f = 100 MHz)
= −5.0 Vdc, R
= −5.0 V)
= −5.0 V)
(V
CB
CB
Characteristic
= −30 V)
= −30 V, T
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC857C, BC858C
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
BC856, BC857, BC858 Series
BC859 Series
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
A
(T
= 150°C)
A
= 25°C unless otherwise noted)
BC856 Series
BC857 Series
BC858, BC859 Series
BC856 Series
BC857A, BC857B Only
BC858, BC859 Series
BC856 Series
BC857 Series
BC858, BC859 Series
BC856 Series
BC857 Series
BC858, BC859 Series
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2
V
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CE(sat)
I
BE(sat)
BE(on)
C
CBO
h
NF
f
FE
T
ob
−5.0
−5.0
−5.0
−0.6
Min
−65
−45
−30
−80
−50
−30
−80
−50
−30
125
220
420
100
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.7
−0.9
Typ
150
270
180
290
520
90
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.65
−0.75
−0.82
Max
−4.0
−0.3
−15
250
475
800
4.5
4.0
10
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MHz
Unit
nA
dB
mA
pF
V
V
V
V
V
V
V
−