MMBT4401T-7-F Diodes Inc, MMBT4401T-7-F Datasheet - Page 3

• Manufacturer Part Number: MMBT4401T-7-F
• Description: TRANSISTOR NPN 40V SOT-523
• Manufacturer: Diodes Inc

Specifications of MMBT4401T-7-F

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT4401T-FDITR

DS30272 Rev. 8 - 2
1,000
Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current
100
10
100
5.0
1.0
0.5
0.4
0.3
0.2
1
0.1
30
20
10
1
0
0.1
1
Fig. 5 Typical Collector Emitter Saturation Voltage
I
I
C
B
I , COLLECTOR CURRENT (mA)
C
= 10
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (V)
R
Fig. 3 Typical Capacitance
vs. Collector Current
10
1.0
10
T = 150°C
A
T = 25°C
100
A
10
T = -50°C
A
100
1,000
50
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0.4
1.0
0.9
0.8
0.7
0.6
0.5
0.3
0.2
1.0
2.0
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
Fig. 6 Typical Base-Emitter Voltage vs. Collector Current
0.001
0
0.1
Fig. 4 Typical Collector Saturation Region
V
CE
0.01
I , COLLECTOR CURRENT (mA)
C
= 5V
I , BASE CURRENT (mA)
B
1
0.1
T = -50°C
T = 25°C
A
T = 150°C
A
1
A
10
10
© Diodes Incorporated
MMBT4401T
100
100