NSS1C200MZ4T1G ON Semiconductor, NSS1C200MZ4T1G Datasheet
NSS1C200MZ4T1G
Specifications of NSS1C200MZ4T1G
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NSS1C200MZ4T1G Summary of contents
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... NSS1C200MZ4 100 V, 2.0 A, Low V PNP Transistor 2 ON Semiconductor’s e PowerEdge family of low V transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I Collector −Base Breakdown Voltage (I C Emitter −Base Breakdown Voltage (I = −0.1 mAdc Collector Cutoff Current (V = −140 Vdc Emitter Cutoff Current (V = ...
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I , COLLECTOR CURRENT (A) C Figure 2. DC Current Gain 0.1 150°C 25°C −55°C 0.01 0.001 0.01 0 ...
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1.0 0.8 −55°C 25°C 0.6 0.4 150°C 0.2 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 8. Base−Emitter Voltage 400 300 200 100 ...
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... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...