TIP33CG ON Semiconductor, TIP33CG Datasheet - Page 3

• Manufacturer Part Number: TIP33CG
• Description: TRANS NPN 10A 100V HI PWR TO-218
• Manufacturer: ON Semiconductor

Specifications of TIP33CG

• Transistor Type: NPN
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 4V @ 2.5A, 10A
• Current - Collector Cutoff (max): 700µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 3A, 4V
• Power - Max: 80W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: SOT-93, TO-218 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 10 A
• Power Dissipation: 80 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 10 A
• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Frequency: 3 MHz
• Minimum Operating Temperature: - 65 C
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 10A
• Dc Current Gain (min): 40
• Frequency (max): 3MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: SOT-93
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TIP33CGOS

FORWARD BIAS
voltage and current conditions these devices can withstand
during forward bias. The data is based on T
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10%, and must be
derated thermally for T
The Forward Bias Safe Operating Area represents the
5.0
3.0
2.0
1.0
0.5
0.2
0.1
15
10
1.0
Figure 2. Maximum Rated Forward Bias
T
2.0 3.0
C
V
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT
CE
= 25°C
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Safe Operating Area
C
5.0 7.0
> 25_C.
10 ms
10
500
200
100
5.0
50
20
10
0.1
dc
1.0 ms
20
TIP33C
TIP33A
C
= 25_C; T
30
Figure 1. DC Current Gain
50
NPN
PNP
300 ms
I
TIP33A, TIP33C
http://onsemi.com
C
, COLLECTOR CURRENT (A)
70
J(pk)
100
3
1.0
REVERSE BIAS
voltage and current conditions these devices can withstand
during reverse biased turn−off. This rating is verified under
clamped conditions so the device is never subjected to an
avalanche mode.
5.0
20
15
10
The Reverse Bias Safe Operating Area represents the
0
0
V
T
Figure 3. Maximum Rated Forward Bias
J
CE
= 25°C
V
= 4.0 V
CE
20
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Safe Operating Area
10
40
60
L = 200 mH
I
V
T
C
C
BE(off)
/I
B
= 100°C
≥ 5.0
= 0 to 5.0 V
80
100