MJE5742G ON Semiconductor, MJE5742G Datasheet
MJE5742G
Specifications of MJE5742G
Available stocks
Related parts for MJE5742G
MJE5742G Summary of contents
Page 1
... MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features • These Devices are Pb−Free and are RoHS Compliant* Applications • Small Engine Ignition • Switching Regulators • ...
Page 2
... The internal Collector−to−Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the Forward Recovery Voltage ( this diode is comparable to that of typical fast recovery rectifiers. f ORDERING INFORMATION Device MJE5740G MJE5742G (T = 25_C unless otherwise noted) C Î Î Î Î Î Î Î Î Î Î Î Î ...
Page 3
SECOND BREAKDOWN DERATING 80 60 THERMAL DERATING 100 T , CASE TEMPERATURE (°C) C Figure 1. Power Derating 2000 150°C 1000 25°C - 55°C 100 ...
Page 4
Table 1. Test Conditions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING 1N493 0.001 2N222 W 1 DUTY CYCLE ≤ 10 ≤ ...
Page 5
FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I limits of the transistor that must be observed for reliable operation; i.e., the transistor ...
Page 6
... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...