TGA2512 TriQuint, TGA2512 Datasheet

TGA2512

Manufacturer Part Number

TGA2512

Description

RF Amplifier 5-15 GHz LNA Self Biased

Manufacturer

TriQuint

Datasheet

1.TGA2512.pdf (19 pages)

Specifications of TGA2512

Operating Frequency

5 GHz to 15 GHz

P1db

13 dBm

Noise Figure

1.4 dB

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

1026042

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Download datasheet (508Kb)

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

The TriQuint TGA2512 is a wideband LNA with

AGC amplifier for EW, ECM, and RADAR

receiver or driver amplifier applications.

Offering high gain 27dB typical from 5-15GHz,

the TGA2512 provides excellent noise

performance with typical midband NF 1.4dB,

while the balanced topology offers good return

loss typically 15dB.

The TGA2512 is designed for maximum ease

of use. The large input FETs can handle up to

21dBm input power reliably, while the build-in

gain control provides 15dB of typical gain

control range. The part is also assembled in

self-biased mode, using a single +5V supply

connection from either side of the chip, or in

gate biased mode, allowing the user to control

the current for a particular applications.

In self-biased mode the TGA2512 offers 6dBm

typical P1dB, while in gate-biased mode the

typical P1dB is over 13dBm. The small size of

2.46mm

Chip-Modules (MCMs).

The TGA2512 is 100% DC and RF tested on-

wafer to ensure performance compliance.

Lead-Free & RoHS compliant.

Product Description

Datasheet subject to change without notice

allows ease of compaction into Multi-

X Band Low Noise Amplifier

May 2009 © Rev -

-10

-20

-30

-40

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

Key Features

•

Primary Applications

•

Bias Conditions: Gate Bias Vd = 5 V, Id = 160 mA

Typical Frequency Range: 5 - 15 GHz

1.4 dB Nominal Noise Figure

27 dB Nominal Gain

Bias: 5 V, 160 mA Gate Bias

0.15 um 3MI pHEMT Technology

Chip Dimensions 2.05 x 1.20 x 0.10 mm

X-Band Radar

EW, ECM

Point-to-Point Radio

Measured Fixtured Data

5 V, 90 mA Self Bias

Frequency (GHz)

IRL

(0.081 x 0.047 x 0.004 in)

11 12

GAIN

TGA2512

ORL

13 14

Related parts for TGA2512

TGA2512 Summary of contents

Page 1

... P1dB is over 13dBm. The small size of 2.46mm 2 allows ease of compaction into Multi- Chip-Modules (MCMs). The TGA2512 is 100% DC and RF tested on- wafer to ensure performance compliance. Lead-Free & RoHS compliant. Datasheet subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Key Features • ...

Page 2

... Q1, Q4, Q5 are 400 um FETs. Q2, Q6 are 300 um FETs. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com TABLE I MAXIMUM RATINGS 1/ PARAMETER TABLE II DC PROBE TESTS ( °C, Nominal) PARAMETER MIN. -30 -0.7 May 2009 © Rev - TGA2512 VALUE NOTES [3.5 + (0.0125)(Id +0.5 V 240 7. dBm 1. 200 ° ...

Page 3

... Noise Figure, NF Output Power @ 1dB Gain Compression, P1dB OIP3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com TABLE III ELECTRICAL CHARACTERISTICS ( Nominal) Gate Bias 5.0 160 -0 1 May 2009 © Rev - TGA2512 Self Bias UNITS GHz 5 1 dBm ...

Page 4

... Median Lifetime (Tm) vs. Channel Temperature TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com TABLE IV THERMAL INFORMATION T TEST CONDITIONS CH (° 100 Id = 160 mA Gate Bias Pdiss = 0. 82 Self Bias Pdiss = 0.45 W May 2009 © Rev - TGA2512 θ (HRS) (°C/W) 37.6 5.8E+6 28.2 4.1E+7 4 ...

Page 5

... Bias Conditions: Gate Bias 160 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Measured Fixtured Data Frequency (GHz Frequency (GHz) May 2009 © Rev - TGA2512 ...

Page 6

... TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Measured Fixtured Data Bias Conditions: Gate Bias 160 Frequency (GHz Frequency (GHz) May 2009 © Rev - TGA2512 ...

Page 7

Page 8

... Bias Conditions: Gate Bias 160 mA Over Temperature TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Measured Fixtured Data Frequency (GHz) May 2009 © Rev - TGA2512 -40C +25C +70C ...

Page 9

... TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Measured Fixtured Data Bias Conditions: Self Bias Frequency (GHz Frequency (GHz) May 2009 © Rev - TGA2512 ...

Page 10

Page 11

Page 12

... Bias Conditions: Self Bias Over Temperature TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Measured Fixtured Data Frequency (GHz) May 2009 © Rev - TGA2512 -40C +25C +70C ...

Page 13

... TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Measured Fixtured Data Self Biased variation over Vctrl Frequency (GHz Frequency (GHz) May 2009 © Rev - TGA2512 Vctrl=0 v Vctrl=3V Vctrl=3.2V Vctrl=3.5V Vctrl=4 V Vctrl=5 V Vctrl= Vctrl=0V Vctrl=2V Vctrl=2.25V Vctrl=2.5V Vctrl=2.75V Vctrl=3V Vctrl=3 ...

Page 14

... Out) 0.100 x 0.200 (0.004 x 0.008) May 2009 © Rev - TGA2512 1.755 (0.069) 1.105 6 (0.044) 0.145 7 (0.006 2.050 1.675 1.955 1.815 (0.081) (0.060) (0 ...

Page 15

... Cap is recommended on Drain Bias (Id = ~90mA) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Vd 100pF RF Out May 2009 © Rev - TGA2512 15 ...

Page 16

... All DC connections may be brought in from either side of the chip (Use Pad 5 or 10, and Pad 0.01uF external Caps are recommended on Drain line Bias (Id = ~90mA), Vctrl = 0 to +5V for Gain adjustment TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Vctrl Vd 100pF 100pF RF Out May 2009 © Rev - TGA2512 16 ...

Page 17

... Bias Vctrl = 0 to +5V for Gain adjustment Vg = Range, -0 typically ~ -0.1 will provide ~160mA of Id. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Option 3: Gate Bias - With Gain Control Vg Vctrl 100pF 100pF 100pF May 2009 © Rev - TGA2512 Vd RF Out 17 ...

Page 18

... TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Equivalent DC schematic May 2009 © Rev - TGA2512 18 ...

Page 19

... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Assembly Process Notes 0 C. May 2009 © Rev - TGA2512 0 C (30 seconds max). 19 ...

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