MAX9993ETP+T Maxim Integrated Products, MAX9993ETP+T Datasheet - Page 5

• Manufacturer Part Number: MAX9993ETP+T
• Description: Up-Down Converters IC MIXER DOWN CONV Hz to 2200MHz Downco
• Manufacturer: Maxim Integrated Products

Specifications of MAX9993ETP+T

• Maximum Input Frequency: 2200 MHz
• Maximum Power Dissipation: 2200 mW
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 350 MHz
• Maximum Power Gain: 8.5 dB
• Operating Supply Voltage: 5 V
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Package / Case: TQFN-20 EP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

(MAX9993 EV Kit, V
injection curves, LO frequency is beyond maximum specified range, and is shown for completeness.)
26
25
24
23
22
21
15
14
13
12
11
10
15
14
13
12
11
10
1700
1700
1700
1750
1750
1750
P
INPUT P
INPUT IP3 vs. RF FREQUENCY
LO
INPUT P
T
A
1800
T
1800
1800
High-Linearity 1700MHz to 2200MHz Down-
P
= +3dBm
= +85°C
A
LO
= +25°C
LOW-SIDE INJECTION
HIGH-SIDE INJECTION
LOW-SIDE INJECTION
= +6dBm
1850
1850
1850
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
1dB
1dB
1900
1900
1900
CC
T
A
_______________________________________________________________________________________
vs. RF FREQUENCY
vs. RF REQUENCY
Conversion Mixer with LO Buffer/Switch
= -40°C
1950
1950
1950
T
= 5.0V, P
A
= -40°C
P
2000
2000
2000
T
LO
A
= +25°C
= 0dBm
T
2050
2050
2050
A
= +85°C
2100
2100
2100
RF
2150
2150
= -5dBm, P
2150
2200
2200
2200
LO
Typical Operating Characteristics (continued)
26
25
24
23
22
21
15
14
13
12
11
10
44
43
42
41
40
39
38
37
36
35
34
= +3dBm, LO is low-side injected for a 200MHz IF, T
1700
LO SWITCH ISOLATION vs. RF FREQUENCY
1700
1700
1750
V
1750
1750
CC
INPUT P
V
T
INPUT IP3 vs. RF FREQUENCY
CC
A
= 5.25V
1800
1800
1800
= -40°C
T
= 5.0V
A
LOW-SIDE INJECTION
LOW-SIDE INJECTION
LOW-SIDE INJECTION
P
= +25°C
1850
1850
1850
LO
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
1dB
= +3dBm, +6dBm
1900
1900
1900
vs. RF FREQUENCY
1950
1950
1950
P
∆f
T
2000
2000
2000
LO1
A
P
LO
LO
= +85°C
V
= 1MHz
= P
2050
2050
2050
CC
= 0dBm
LO2
= 4.75V
2100
2100
2100
= +3dBm
2150
2150
2150
2200
2200
2200
26
25
24
23
22
21
15
14
13
12
11
10
44
43
42
41
40
39
38
37
36
35
34
1700
1700
1700
LO SWITCH ISOLATION vs. RF FREQUENCY
P
1750
1750
1750
LO
INPUT P
V
INPUT IP3 vs. RF FREQUENCY
= 0dBm, +3dBm
CC
1800
1800
1800
= 5.25C
A
HIGH-SIDE INJECTION
LOW-SIDE INJECTION
LOW-SIDE INJECTION
1850
= +25°C. For high-side LO
1850
1850
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
1dB
T
A
1900
1900
1900
V
= +85°C
CC
vs. RF FREQUENCY
P
1950
= 4.75V
1950
1950
LO
= +6dBm
V
2000
2000
2000
CC
T
A
= 5.0V
= +25°C
2050
2050
2050
P
∆f
LO1
T
LO
2100
2100
2100
A
= -40°C
= 1MHz
= P
2150
2150
2150
LO2
2200
2200
2200
5